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Study of the Zeeman Effect of Er3+ in GaAs:Er,O

Published online by Cambridge University Press:  10 February 2011

Dieter Haase ,
Achim Dörnen ,
Kenichiro Takahei  and
Akihito Taguchi
Dieter Haase
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Box 80 11 40, Federal Republic of Germany; A.Doernen@physik.uni-stuttgart.de
Achim Dörnen
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Box 80 11 40, Federal Republic of Germany; A.Doernen@physik.uni-stuttgart.de
Kenichiro Takahei
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugishi-shi, Kanagawa, 243-01, Japan; takahei@will.brl.ntt.jp
Akihito Taguchi
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugishi-shi, Kanagawa, 243-01, Japan; takahei@will.brl.ntt.jp
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Abstract

We analyze the Zeeman effect of the 4/13/2 → 4/15/2 transition of Er3+ in GaAs:Er,O grown by metal-organic vapor-phase epitaxy. The photoluminescence spectrum has been assigned previously to one specific Er-O complex. The dominant optical transition at 1538 nm (6499.5 cm−1), which shows a full width at half maximum of only 0.05 cm−1, has been investigated by high-resolution Zeeman spectroscopy. A highly anisotropic Zeeman pattern is found which indicates the low symmetry of the underlying complex. A detailed analysis shows that the defect has a predominant rhombic symmetry C2v,. Additionally, smaller contributions of a crystal field with a monoclinic symmetry Clh are found. The results provide further arguments that an ErO2 complex is the responsible center observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 179
Copyright
Copyright © Materials Research Society 1996

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