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Study of the Si/ZnS Multilayer System for Optoelectronic Applications
Published online by Cambridge University Press: 10 February 2011
Abstract
The suitability of the (001) Si/ZnS system for optoelectronic applications is theoretically investigated and compared to the Si/Ge system. The band-structure calculations show that Si/ZnS is superior to Si/Ge in a number of respects: directness of band gap can be easily obtained; and optical intersubband transitions fall within the important 1.3–1.6 μm window.
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- Copyright © Materials Research Society 1998