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A Study of Se+ Implants into Encapsulated GaAs

Published online by Cambridge University Press:  26 February 2011

R. Gwilliam
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, U.K.
M. A. Shahid
Affiliation:
Department of Metallurgical Engineering and Materials Science, 3325 Science Hall, Pittsburgh, Pennsylvania 15213, U.S.A.
B. J. Sealy
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, U.K.
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Abstract

The effects of implanting Se+ ions through Si N4 layers have been compared with implants into uncapped GaAs. Through nitride implants have a higher residual damage, lower carrier concentration and lower mobility following rapid thermal annealing between 850 and 975 °C. The effect is believed to be due to the interface strain between the encapsulant and the amorphous GaAs.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

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References

[1]. Gwilliam, R., Bensalem, R., Sealy, B.J. and Stephens, K.G., Physica 129B, 440–4 (1985).Google Scholar
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