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Study of Photoluminescent thin film Porous Silicon on Sapphire

Published online by Cambridge University Press:  28 February 2011

W. B. Dubbelday ,
D. M. Szaflarskf ,
R. L. Shimabukuro  and
S. D. Russell
W. B. Dubbelday
Affiliation:
Naval Command Control and Ocean Surveillance Center, RDT&E Division (NRaD), Solid State Electronics, Code 553, San Diego, CA 92152–5000
D. M. Szaflarskf
Affiliation:
Naval Command Control and Ocean Surveillance Center, RDT&E Division (NRaD), Solid State Electronics, Code 553, San Diego, CA 92152–5000
R. L. Shimabukuro
Affiliation:
Naval Command Control and Ocean Surveillance Center, RDT&E Division (NRaD), Solid State Electronics, Code 553, San Diego, CA 92152–5000
S. D. Russell
Affiliation:
Naval Command Control and Ocean Surveillance Center, RDT&E Division (NRaD), Solid State Electronics, Code 553, San Diego, CA 92152–5000
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Abstract

Photoluminescence in porous silicon on sapphire (SOS) prepared through chemical staining and photo-initiated chemical etch is demonstrated. SOS consists of single crystal quality material on a transparent substrate through which photoluminescence can be excited and observed. Porous silicon films as thin as 270 nm are shown to photoluminesce. This study explores the effect of varying film thickness and crystal quality on the photoluminescent emission from porous silicon. Introduction of crystal defects by ion implantation is used to create controlled damaged layers prior to fabricating porous silicon. No photoluminescence is observed from chemically stained or electrochemically etched amorphized layers. Corroborative results are obtained using LPCVD deposited amorphous silicon layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 161
Copyright
Copyright © Materials Research Society 1993

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References

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