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The Study of Hafnium Silicate by Various Nitrogen Gas Annealing Treatment
Published online by Cambridge University Press: 01 February 2011
Post annealing of Hf-silicate thin film grown by ALD was done with different kind of nitrogen gas and order of annealing. Annealing conditions are as follows: (1) NO gas only, (2) NH3 gas only, (3) NO gas + NH3 gas, and (4) NH3 + NO gas. With these conditions, the physical and electrical properties of nitrided Hf-silicate films were analyzed. Content of nitrogen is decreased with post NO gas annealing. In case of NH3, content of nitrogen is much higher than NO case. Most nitrogen atoms were distributed between Si substrate and Hf-silicate film for NO gas annealing. However, with NH3 gas annealing, nitrogen atoms were distributed in the whole Hf-silicate film evenly. Leakage current was decreased with post NO gas annealing and flat band voltage was also decreased.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 1073: Symposium H – Materials Science of High-k Dielectric Stacks—From Fundamentals to Technology , 2008 , 1073-H04-21
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