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Study of Diffusion Barrier Performance in MOCVD TiN by Transmission Electron Microscopy

Published online by Cambridge University Press:  15 February 2011

Hoojeong Lee ,
Robert Sinclair ,
Bruce Roberts  and
Robert Jackson
Hoojeong Lee
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Bruce Roberts
Affiliation:
Novellus Systems Inc, 81 Vista Montana, San Jose, CA 95134
Robert Jackson
Affiliation:
Novellus Systems Inc, 81 Vista Montana, San Jose, CA 95134
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Abstract

The diffusion barrier performances of MOCVD TiN films with different thicknesses and various contact layers are compared by both ex situ and in situ TEM experiments. MOCVD TiN films grown at 425°C and 10 torr without a titanium underlayer show a semi-columnar structure while films grown with a titanium layer are columnar. It is found that the former has better diffusion barrier performance for Al metallization in Si contact holes. In addition, it is found the MOCVD TiN films combined with a TiSi2 contact layer are stable up to 600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 205
Copyright
Copyright © Materials Research Society 1995

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