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The Structure of a Near Coincidence Σ=5, [001] Twist Boundary in Silicon

Published online by Cambridge University Press:  15 February 2011

Mark Vaudin  and
Dieter Ast
Mark Vaudin
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853.
Dieter Ast
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853.
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Abstract

The dislocation structure of a near coincidence Σ=5 [001]twist boundary in silicon was studied using transmission electron microscopy. Secondary dislocations, with localized cores, were observed in the boundary accommodating a small deviation (<.5°) from perfect coincidence. The O-lattice theory for general low angle boundaries was extended to calculate the expected dislocation content of near coincidence boundaries. Comparison between predictions and observations was used to deduce information on the primary dislocation structure of the boundary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 369
Copyright
Copyright © Materials Research Society 1982

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References

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