Hostname: page-component-7bb8b95d7b-lvwk9 Total loading time: 0 Render date: 2024-09-11T10:53:00.345Z Has data issue: false hasContentIssue false

Structural and Optical Properties of ZnS:Mn Films Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  21 March 2011

K. M. Yeung
Affiliation:
Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
S. G. Lu
Affiliation:
Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
C. L. Mak*
Affiliation:
Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
K. H. Wong
Affiliation:
Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
*
*corresponding author: apaclmak@polyu.edu.hk
Get access

Abstract

High-quality manganese-doped zinc sulfide (ZnS:Mn) thin films have been deposited on various substrates using pulsed laser deposition (PLD). Effects of back-filled Ar pressure and substrate temperature on the structural as well as optical properties of ZnS:Mn films were studied. Structural properties of these films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Photoluminescence (PL) and optical transmittance were used to characterize the optical properties of these films. Our results reveal that ZnS:Mn films were polycrystalline with a mixed phase structure consisting of both wurtzite and zinc-blende structure. The ratio of these two structures was strongly depended on the change of substrate temperature. Low substrate temperature facilitated the formation of zinc-blende structure while the wurtzite phase became dominant at high substrate temperature. ZnS:Mn films with preferred wurtzite structure were obtained at a substrate temperature as low as 450°C. An orange-yellow emission band was observed at ∼590 nm. As the substrate temperature increased, the peak of this PL band shifted to a shorter wavelength. Furthermore, shifts in the absorption edge and the energy gap due to the change in substrate temperature were also observed. The variation in these optical properties will be correlated to their structural change.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mandal, S.K., Chaudhuri, S., Pal, A.K., Thin Solid Films 350, 209 (1999).Google Scholar
2. Fang, J., Holloway, P. H., Yu, J.E., Jones, K.S., Appl. Surf. Sci. 70/71,701 (1993)Google Scholar
3. Ichino, K., Ueyama, K., Yamamoto, M., Kariya, H., Miyata, H., Misasa, H., Kitagawa, M., and Kobayashi, H., J. Appl. Phys. 87, 4249 (2000).Google Scholar
4. Hsu, C.T., Thin Solid films 335, 284 (1998).Google Scholar
5. Tang, W., Cameron, D.C., Thin Solid Films 280, 221 (1996).Google Scholar
6. Elidrissi, B., Addou, M., Regragui, M., Bougrine, A., Kachouane, A. and Bernède, J.C., Materials Chemistry and Physics 68, 179 (2001).Google Scholar
7. Shen, W.P. and Kwok, H.S., Appl. Phys. Lett. 65, 2162 (1994).Google Scholar
8. McLaughlin, M., Sakeek, H.F., Maguire, P., Graham, W.G., Molloy, J., Laverty, S., Anderson, J., Appl. Phys. Lett. 63, 1865 (1993).Google Scholar
9. Yamamoto, Hajime, in Zinc Sulphide, Luminescence and Related Properties of II-VI semiconductors, edited Vij, D.R. and Singh, N. (NOVO Science publishers, INC., 1998) p.202.Google Scholar
10. Ono, Yoshimasa A., in Electroluminescent Displays (World Scientific, 1995) pp. 8283.Google Scholar
11. He, T., Ehrhart, P. and Meuffels, P., J. Appl. Phys. 79, 3219 (1995).Google Scholar
12. Kam, C.H., Cheng, S.D., Zhou, Y., Pita, K., Han, X.Q., Que, W.X., Zhang, H.X., Lam, Y.L., Chan, Y.C., Sun, Z., and Shi, X.., SPIE 3896, 466 (1999).Google Scholar