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Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures with Different Well Widths

Published online by Cambridge University Press:  01 February 2011

Young-Hoon KIM
Affiliation:
Department of Physics, Chungnam National University, Taejon, korea 305-764
Chang-Soo KIM
Affiliation:
National Research Laboratory on Quantum Dot Technology, Materials Evaluation Center, Korea Research Institute of Standards and Science, Taejon, Korea 305-600
Sam-Kyu NOH
Affiliation:
National Research Laboratory on Quantum Dot Technology, Materials Evaluation Center, Korea Research Institute of Standards and Science, Taejon, Korea 305-600
Jae-Young LEEM
Affiliation:
National Research Laboratory on Quantum Dot Technology, Materials Evaluation Center, Korea Research Institute of Standards and Science, Taejon, Korea 305-600
Kee-Young LIM
Affiliation:
Semiconductor Physics Research center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju, Korea 561-756
Byung-Sung O
Affiliation:
Department of Physics, Chungnam National University, Taejon, korea 305-764
Jay P. Song
Affiliation:
SongJee Industrial Corporation, Sungnam, Korea 463-500
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Abstract

The structural and the optical properties of 10-period In0.15Ga0.85N/GaN multiple quantum wells (MQWs) have been investigated using HRXRD (high-resolution X-ray diffraction) and PL (photoluminescence). For the samples, the barrier thickness was kept constant, 7.5 nm and the well thicknesses were varied, 1.5, 3.0, 4.5, and 6.0 nm. For the structural characterization, an ω/2θ-scan and an ω-scan for GaN (00 2) reflection and a reciprocal space mapping (RSM) around the GaN (10 5) lattice point were employed. The average strain for the MQWs increased as the well thickness increased. The MQW with a 6.0 nm well thickness experienced lattice relaxation and the crystallinity of the sample was poor compared to that of the other samples. MQWs with well thicknesses of 1.5, 3.0 and 4.5 nm, however, maintained lattice coherency with the GaN epilayers underneath, and the critical well thickness for lattice relaxation of the MQWs used in the study was 6.0 nm. The PL spectra showed that the relative emission intensity of the sample with a 6.0 nm well thickness was lower than for the others, a fact consistent with the X-ray results. The emission intensity, therefore, is considered to be affected by defects due to lattice relaxation of the epilayer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

1. Ambacher, O, J. Phys. D: Appl. Phys. 32, 2653 (1998)Google Scholar
2. Bai, J., Wang, T., and Sakai, S., J. Appl. Phys. 88, 4729 (2000)Google Scholar
3. Matthews, J. W. and Blackeslee, A. E., J. Crystal Growth 32, 256 (1974)Google Scholar
4. Li, Wei, Bergman, Peder, Ivanov, Ivan, Ni, Wei-xin, Amano, H. and Akasa, I., Appl. Phys. Lett. 69, 3390 (1996)Google Scholar
5. Kapolnek, D., Wu, X. H., Heying, B., Keller, S., Keller, B. P., Mishra, U. K., DenBaars, S. P. and Speck, J. S., Appl. Phys. Lett. 67, 1541 (1995)Google Scholar
6. Bauer, Gunther and Richter, Wolfgang, Optical Characterization of Epitaxial Semiconductor Layer (Springer, New York, 1996), pp. 294298.Google Scholar
7. Fewster, Paul F, X-Ray Scattering from Semiconductors (Imperial College Press, London, 2000), pp. 244253.Google Scholar
8. Fischer, A., Kuhne, H. and Richter, H., Phys. Rev. Lett. 73, 2712 (1994)Google Scholar
9. Liu, H., Kim, J. G., Ludwig, M. H. and Park, R. M., Appl. Phys. Lett. 71, 347 (1997)Google Scholar