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Structural and Electrical Properties of Undoped Microcrystalline Silicon Grown by 70 MHz and 13.56 MHz PECVD

Published online by Cambridge University Press:  28 February 2011

R. Flückiger
Affiliation:
Institut de Microtechnique, Rue A.L. Breguet 2, CH-2000 Neuchâtel, Suisse.
J. Meier
Affiliation:
Institut de Microtechnique, Rue A.L. Breguet 2, CH-2000 Neuchâtel, Suisse.
G. Crovini
Affiliation:
Dept. Physics Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, Italy.
F. Demichelis
Affiliation:
Dept. Physics Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, Italy.
F. Giorgis
Affiliation:
Dept. Physics Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, Italy.
C.F. Pirri
Affiliation:
Dept. Physics Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, Italy.
E. Tresso
Affiliation:
Dept. Physics Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, Italy.
J. Pohl
Affiliation:
Universitat Konstanz, Postfach 5560/X916, D-78434 Konstanz 1, Deutschland.
V. Rigato
Affiliation:
Lab. INFN of Legnaro, Via Romea 4, Padova, Italy.
S. Zandolin
Affiliation:
Lab. INFN of Legnaro, Via Romea 4, Padova, Italy.
F. Caccavale
Affiliation:
Dept. Physic Univ. of Padova, Italy.
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Abstract

Microcrystalline silicon films deposited by plasma methods have an optical absorption for photon energies above 2.0 eV lower than a-Si:H films and can be efficiently doped with boron or phosphorus. The most widely used deposition technique is the 13.56 MHz PECVD. However quite recently µc-Si:H films were grown at high deposition rates by the 70 MHz PECVD. In this work the authors report on a comparison between µc-Si:H films deposited by both 70 MHz and 13.56 MHz techniques. Particular attention has been devoted to differences and similarities between structural, compositional and electrical properties of the films deposited with the two systems.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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Structural and Electrical Properties of Undoped Microcrystalline Silicon Grown by 70 MHz and 13.56 MHz PECVD
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