Skip to main content Accessibility help
×
Home
Hostname: page-component-cf9d5c678-xvx2z Total loading time: 0.238 Render date: 2021-07-31T17:28:25.580Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Stress Limited Scaling of Ge2Sb2Te5

Published online by Cambridge University Press:  01 February 2011

Robert Edward Simpson
Affiliation:
robert.simpson@aist.go.jp, National Institute for Advanced Industrial Science and Technology, Nanodevice Innovation Research Centre, Tsukuba, Japan
Milos Krbal
Affiliation:
milos.krbal@aist.go.jp, National Institute for Advanced Industrial Science and Technology, Nanodevice Innovation Research Centre, Tsukuba, Ibaraki, Japan
Paul Fons
Affiliation:
paul-fons@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Center for Applied Near-Field Optics Research, Tsukuba, Japan
Alex Kolobov
Affiliation:
a.kolobov@aist.go.jp, United States
Tomoya Uruga
Affiliation:
Urugat@spring8.or.jp, JASRI, Spring-8, Japan
Hajime Tanida
Affiliation:
Tanida@spring8.or.jp, JASRI, Spring-8, Hyogo, Japan
Junji Tominaga
Affiliation:
j-tominaga@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Nanodevice Innovation Research Centre, Tsukuba, Japan
Get access

Abstract

The influence of stress on the phase change behaviour of Ge2Sb2Te5 encapsulated by ZnS-SiO2 and TiN is investigated using temperature dependent Extended X-ray Asbsorption Fines Structure and Ellipsometry to determine the crystallisation temperature. The encapsulation material surrounding the Ge2Sb2Te5 has an increasingly dominant effect on the material's ability to change phase and can cause a profound increase in its crystallization temperature. We have experimentally shown that the increased crystallization temperature originates from compressive stress exerted from the encapsulation material. By minimizing the stress we have maintained the bulk crystallization temperature in Ge2Sb2Te5 films just 2 nm thick.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Wuttig, M. and Yamada, N.. Phase-change materials for rewriteable data storage. Nature Mater., 6:824832, 2007.CrossRefGoogle ScholarPubMed
[2] Pirovano, A, Lacaita, A L, Benvenuti, A, Pellizzer, F, Hudgens, S, and Bez, R. Scaling analysis of phase-change memory technology. In Electron Devices Meeting. IEDM '03 Technical Digest. IEEE International, IEEE, December 2003.Google Scholar
[3] Welnic, Wojciech, Botti, Silvana, Reining, Lucia, and Wuttig, Matthias. Origin of the optical contrast in phase-change materials. Phys. Rev. Lett., 98(23):236403, 2007.CrossRefGoogle ScholarPubMed
[4] Raoux, Simone, Jordan-Sweet, Jean L., and Kellock, Andrew J.. Crystallization properties of ultrathin phase change fims. J. Appl. Phys., 103(11):114310, JUN 1 2008.CrossRefGoogle Scholar
[5] Raoux, Simone, Cheng, Huai-Yu, Jordan-Sweet, Jean L., Munoz, Becky, and Hitzbleck, Martina. Inuence of interfaces and doping on the crystallization temperature of Ge-Sb. Appl. Phys. Lett., 94(18):183114, 2009.CrossRefGoogle Scholar
[6] Kolobov, A.V. Fons, P. Tominaga, J. Frenkel, A. Ankudinov, A.L. and Uruga, T.. Un-derstanding the phase-change mechanism of rewritable optical media. Nature Mater., 3:703708, 2004.CrossRefGoogle Scholar
[7] Shportko, K. Kremers, S. Woda, M. Lencer, D. Robertson, J. and Wuttig, M.. Resonant bonding in crystalline phase-change materials. Nature Mater.,7:853858, 2008.CrossRefGoogle ScholarPubMed
[8] Simpson, R. E. Krbal, M. Fons, P. Kolobov, A. V. Tominaga, J. Uruga, T. and Tanida, H.. Toward the ultimate limit of phase change in Ge2Sb2Te5. Nano.Lett., 10:414419, 12 2010.CrossRefGoogle Scholar
[9] Yu, Y.H. Lai, M.O. Lu, L. and Yang, P.. Measurement of residual stress of pzt thin film on si(100) by synchrotron x-ray rocking curve technique. J. Alloy Compd., 449(1-2):5659, 2008. The First International Symposium on Functional Materials (ISFM2005).CrossRefGoogle Scholar
[10] Janssen, G.C.A.M. Abdalla, M.M. Keulen, F. van, Pujada, B.R. and Venrooy, B. van. Cel-ebrating the 100th anniversary of the stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers. Thin Solid Films, 517(6): 18581867, 2009.CrossRefGoogle Scholar
[11] Franca, D. R. and Blouin, A.. All-optical measurement of in-plane and out-of-plane young's modulus and poisson's ratio in silicon all-optical measurement of in-plane and out-of-plane young's modulus and poisson's ratio in silicon wafers by means of vibration modes. Meas Sci Technol, 15:859868, 2004.CrossRefGoogle Scholar
[12] Nelson, Andrew. Co-refinement of multiple-contrast neutron/X-ray reectivity data us-ing MOTOFIT. J. Appl. Cryst., 39(2):273276, 2006.CrossRefGoogle Scholar
[13] Ravel, B. and Newville, M.. Athena Artemis, Hephaestus: data analysis for X-ray absorption spectroscopy using IFEFFIT. J. Synchrotron Radiat., 12(4):537541, Jul 2005.CrossRefGoogle ScholarPubMed
[14] Park, Il-Mok, Jung, Jung-Kyu, Ryu, Sang-Ouk, Choi, Kyu-Jeong, Yu, Byoung-Gon, Park, Young-Bae, Han, Seung Min, and Joo, Young-Chang. Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory. Thin Solid Films, 517(2):848852, NOV 28 2008.CrossRefGoogle Scholar
[15] Wei, Xiaoqian, Luping, Shi, Chong, Chong Tow, Rong, Zhao, and Koon, Lee Hock. Thick-ness dependent nano-crystallization in Ge2Sb2Te5 films and its effect on devices. Jpn. J. Appl. Phys., 46(4B1):22112214, 2007.CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Stress Limited Scaling of Ge2Sb2Te5
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Stress Limited Scaling of Ge2Sb2Te5
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Stress Limited Scaling of Ge2Sb2Te5
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *