Stress and Strain Measurements in Semiconductor Device Channel Areas by Convergent Beam Electron Diffraction
Published online by Cambridge University Press: 01 February 2011
Convergent electron beam diffraction (CBED) has been successfully applied to measure strain/stress in the channel area in PMOS semiconductor device with embedded SiGe (eSiGe) for 65nm technology. Reliable results of strain/stress measurements in the channel area have been achieved by good fitting of experimental CBED patterns with theoretical calculations. Stress measurements from CBED are in good agreement with simulations. A compressive stress as high as 823.9 MPa was measured in the <110> direction in the channel area of a PMOS device with eSiGe with 15% Ge and a thickness of 80nm. Stress measurements from CBED also confirm that the depth of the eSiGe and defects such as dislocation loops within the eSiGe relax strain/stress within the film and reduce strain/stress in the channel area.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D05-03
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