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Strength of Coherently Strained Nanolayers Under High Temperature Nanoindentation

Published online by Cambridge University Press:  26 February 2011

Mok Yew P'ng ,
X. D. Hou ,
D. J. Dunstan  and
A. J. Bushby
Mok Yew P'ng
Affiliation:
m.y.png@qmul.ac.uk, Queen Mary, University of London, Materials, Materials Department,, Queen Mary, University of London,, Mile End Road, London, E1 4NS, United Kingdom, 44 (0)2078823762
X. D. Hou
Affiliation:
x.hou@qmul.ac.uk, Queen Mary, University of London, Centre of Materials Research, Mile End Road, London, E1 4NS, United Kingdom
D. J. Dunstan
Affiliation:
D.Dunstan@qmul.ac.uk, Queen Mary, University of London, Centre of Materials Research, Mile End Road, London, E1 4NS, United Kingdom
A. J. Bushby
Affiliation:
A.J.Bushby@qmul.ac.uk, Queen Mary, University of London, Centre of Materials Research, Mile End Road, London, E1 4NS, United Kingdom
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Abstract

Semiconductor strained layer superlattices are an ideal model material to study the effects of coherency strain in plasticity, due to the fine control of nanolayer thickness and internal strain afforded by MBE deposition. Previously, nanoindentation of bulk InGaAs at 300K gave a yield pressure of 6GPa (Jayawera et al Proc. Roy Soc, A459, 2049, 2003) while bending at 500 centigrade gave a yield value of 30MPa (Pp’ ng et al Phil. Mag. 85, 4429, 2005). In contrast, coherently strained InGaAs superlattices gave nanoindentation values of 3GPa at room temperature and bending at 500oC gave a yield value also around 3GPa. It appears that the coherency strain can impart an athermal strengthening to the superlattice. It is clearly necessary to do mechanical testing over the range 300-800K that will be able to link the room temperature nanoindentation with the results from the high temperature bending experiment and to determine the relationship between strength, coherency strain and temperature. Preliminary experiments on these samples at elevated temperatures using a hot stage and the UMIS nanoindentation system is difficult but feasible with the help of AFM to verify the contact area.

Keywords

III-Vstrengthnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 977: Symposium FF – Processing-Structure-Mechanical Property Relations in Composite Materials , 2006 , 977-FF07-04-EE07-04
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCE

1. Fischer-Cripps, A. C., Vacuum, 58, 569 (2000)Google Scholar
2. Bushby, A. J., Non-destructive testing and evaluation, 17, 213 (2001)Google Scholar
3. Fischer-Cripps, A. C., Nanoindentation, (Springer, 2004)Google Scholar
4. Pool, R., Science, 247, 643 (1990)Google Scholar
5. Jalili, N., Laxminarayana, K., Mechatronics, 14, 907 (2004)Google Scholar
6. P'ng, K. M. Y., Bushby, A. J., Dunstan, D. J., Philosophical Magazine, 85, 4429 (2005)Google Scholar
7. Jayaweera, N. B., Downes, J. R., Frogley, M. D., Hopkinson, M., Bushby, A. J., Kidd, P., Kelly, A., and Dunstan, D. J., Proc. Roy. Soc. A., 459, 2049 (2003)Google Scholar
8. Dunstan, D.J., J. Mat. Sci.: Materials in Electronics, 8, 337 (1997).Google Scholar
9. Madelung, O., Semiconductors Group IV Elements and III-V compounds, (Springer-Verlag, 1991)Google Scholar
10. Lim, Y. Y., Chaudhri, M. M., Philosophical Magazine, 84, 2877 (2004)Google Scholar
11. Hill, R., Storakers, B., Zdunek, A. B., Proc. Roy. Soc. A, 423, 301 (1989)10.1098/rspa.1989.0056Google Scholar
12. Saha, R., Nix, W.D., Materials Science and Engineering A, 319–321, 898 (2001)Google Scholar
13. Lloyd, S. J., P'ng, K. M. Y., Clegg, W. J., Bushby, A. J., Dunstan, D. J., Philosophical Magazine, 85, 2469 (2005)Google Scholar
14. Yonenaga, I., Sumino, K., Phys. Stat. Sol. (a), 131, 663 (1992)Google Scholar
15. Schmidt, I., Gross, D., Proc. Roy Soc. Lond. A., 455, 3085 (1999)Google Scholar