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Strained Layer Epitaxy: The Role of a Capping Layer and mechanism of Strain Compensation in Multilayers Systems

Published online by Cambridge University Press:  15 February 2011

I. Lefebvre ,
C. Priester ,
G. Allan  and
M. Lannoo
I. Lefebvre
Affiliation:
IEMN Dept ISEN, 41, Bvd Vauban 59046 LILLE CEDEX, FRANCE
C. Priester
Affiliation:
IEMN Dept ISEN, 41, Bvd Vauban 59046 LILLE CEDEX, FRANCE
G. Allan
Affiliation:
IEMN Dept ISEN, 41, Bvd Vauban 59046 LILLE CEDEX, FRANCE
M. Lannoo
Affiliation:
IEMN Dept ISEN, 41, Bvd Vauban 59046 LILLE CEDEX, FRANCE
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Abstract

Within a valence force field framework, we calculate the critical thickness of a film lattice mismatched to the substrate on which it is epitaxially deposited. A capping layer lattice matched to the substrate is known to enhance the critical thickness. We calculate the efficiency of the capping layer and study how the capping layer thickness modifies this efficiency. We also demonstrate how using a capping layer which is no more lattice matched to the substrate may improve the effect of the capping layer. Extension to strain compensation in multilayer systems is provided. In the case of uncapped systems, or systems with a thick capping layer lattice matched to the substrate, the results we have obtained using a microscopic description are compared to recent results, obtained using continuous classical elasticity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 363
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Musgrave, M. J. P. and Popie, J.A., Proc. Roy. Soc. (London), A268, 464 (1962)Google Scholar
2 For two reviews, see Fitzgerald, E.A., Materials Science Reports, 87 (1991), andGoogle Scholar
Hull, R. and Bean, J.C., Critical reviews in Solid State and Materials Sciences, 17, 507 (1992)CrossRefGoogle Scholar
3 Jain, S. C., Gosling, T. J., Willis, J. R., Bullough, R. and Balk, P., d-state electronics, 35, 1073 (1992)CrossRefGoogle Scholar
4 Keating, P. N., Phys. Rev 145, 637 (1966)Google Scholar
5 Tersoff, J., Phys. Rev B 43, 9377 (1991)Google Scholar
6 Martin, R.M., Phys. Rev B 1, 4005 (1970)CrossRefGoogle Scholar
7 Payne, M.C. et al., Rev. Mod. Phys., 64, 1070 (1992)Google Scholar
8 Baraff, G.A. and Schluter, M., Phys. Rev. Lett. 55, 782 (1985), Phys. Rev B 33, 7346 (1986)Google Scholar
9 Matthews, J.W., Vacuum, J. Sci. Tecrmol. 12, 126 (1975)Google Scholar
10 Peach and Koehler's Model given in Hirth, J.P. and Lothe, J., Theory of dislocations, 2nd Ed. (Wiley, New York, 1982)Google Scholar
11 People, R. and Bean, J.C. Appl. Phys. Letters 49, 229 (1986)CrossRefGoogle Scholar
12 Houghton, D.C., Davies, M. and Dion, M., to be published in A.P.L, and J. Cryst. Growth (1994)Google Scholar
13 Priester, C., Lefebvre, I., Allan, G., and Lannoo, M., this MRS Fall Meeting, B4.3Google Scholar
14 van der Merwe, J.H., J. Appl. Phys. 34, 117 (1963)Google Scholar