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Strain Effects in InP Dots in between Barriers of GaInP

Published online by Cambridge University Press:  10 February 2011

Mats-Erik Pistol
Affiliation:
Department of Solid State Physics and Nanometer Structure Consortium, Box 118, Lund University, S-221 00 Lund, SWEDEN
Srinivasan Anand
Affiliation:
Department of Solid State Physics and Nanometer Structure Consortium, Box 118, Lund University, S-221 00 Lund, SWEDEN
Niclas Carlsson
Affiliation:
Department of Solid State Physics and Nanometer Structure Consortium, Box 118, Lund University, S-221 00 Lund, SWEDEN
Dan Hessman
Affiliation:
Department of Solid State Physics and Nanometer Structure Consortium, Box 118, Lund University, S-221 00 Lund, SWEDEN
Lars Landin
Affiliation:
Department of Solid State Physics and Nanometer Structure Consortium, Box 118, Lund University, S-221 00 Lund, SWEDEN
Christer Persson
Affiliation:
Department of Solid Mechanics, Box 118, Lund University, S-221 00 Lund, SWEDEN
Lars Samuelson
Affiliation:
Department of Solid State Physics and Nanometer Structure Consortium, Box 118, Lund University, S-221 00 Lund, SWEDEN
Werner Seifert
Affiliation:
Department of Solid State Physics and Nanometer Structure Consortium, Box 118, Lund University, S-221 00 Lund, SWEDEN
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Abstract

We have investigated the photoluminescence emission energy of InP dots as a function of cap layer thickness. We find a strong blue-shift with increasing cap layer thickness. The strain tensor in the dot as well as in the surrounding matrix has been modelled using finite element methods and the band-gap has been calculated using deformation potential theory. We find good agreement between calculation and experiment. For uncapped dots we find that the emission energy is lower than for biaxially strained InP, and is indeed close to unstrained InP.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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Strain Effects in InP Dots in between Barriers of GaInP
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