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Stoichiometry Control of Compound Semiconductors

Published online by Cambridge University Press:  25 February 2011

Jun-Ichi Nishizawa ,
Ken Suto  and
Yutaka Oyama
Jun-Ichi Nishizawa
Affiliation:
Tohoku University, Katahira Aoba-ku, Sendai 980, Japan
Ken Suto
Affiliation:
Faculty of Engineering, Tohoku University, Aramaki Aoba-ku, Sendai 980, Japan
Yutaka Oyama
Affiliation:
Semiconductor Research Institute, Semiconductor Research Foundation, Kawauchi Aoba-ku, Sendai 980, Japan
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Abstract

Vapor pressure control technology is successfully applied to the bulk crystal growth, epitaxial growth and diffusion process of ZnSe crystals. Surface morphology and the crystal quality are investigated by the optical microscope and the X-ray double crystal diffractometry as the function of the growth temperature and the applying Zn vapor pressure. The cathode luminescence is also measured to evaluate the optical properties and the effect of low temperature growth and the application of Zn vapor pressure are demonstrated, p-type ZnSe crystals are grown from the Se solution with group Ia element as a dopant under controlled Zn vapor pressure, p-n junction diodes are also prepared by the Ga diffusion from Zn solution under Se vapor pressure. Emission spectra from the p-n junction and its Zn and Se vapor pressure dependencies are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 179
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Watanabe, Y., Nishizawa, J. and Sunagawa, I., Kagaku (Iwanami), 21(3), 140–14 (1951)Google Scholar
[2] Otsuka, H., Ishida, K. and Nishizawa, J., Jpn. J. Appl. Phys., 8. 632 (1969)Google Scholar
[3] Nishizawa, J., Otsuka, H., Yamakoshi, S. and Ishida, K., Jpn. J. Appl. Phys., 13, 46 (1974)Google Scholar
[4] Parsey, J. M. Jr, Nanishi, Y., Lagowski, J. and Gatos, H. C., J. Electrochem. Soc, 128, 937 (1981)Google Scholar
[5] Nishizawa, J., Okuno, Y. and Tadano, H., J.Crystal Growth, 31, 215 (1975)Google Scholar
[6] Nishizawa, J. and Okuno, Y., IEEE Trans. Electron. Device ED-22, 716 (1975)Google Scholar
[7] Tomizawa, K., Sassa, K., Shimanuki, Y. and Nishizawa, J., J. Electrochem. Soc, 131, 2394 (1984)Google Scholar
[8] Nishizawa, J., Solid State Materials, edited by Radhakrishna, S. and Daud, A. (Narosa Publishing House, New Delhi, 1991) p. 279 Google Scholar
[9] Nishizawa, J., Okuno, Y. and Suto, K., Japan Annual Reviews in Electronics, Computers & Telecommunications (JARECT), vol. 19, Semiconductor Technologies, (1986) OHMSHA and North Holland, pp. 17–80 (1986)Google Scholar
[10] Nishizawa, J., Ito, K., Okuno, Y. and Sakurai, F., J. Appl. Phys., 57(6), 2210 (1985)Google Scholar
[11] Sakurai, F., Suto, K. and Nishizawa, J., J. Crystal Growth, 112, 153 (1991)Google Scholar
[12] Yamaguchi, M., Yamamoto, A. and Kondo, M., J. Appl. Phys., 48, 196 (1977)Google Scholar
[13] Ruda, H. E., J. Appl. Phys., 59, 3516 (1986)Google Scholar