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Stm Observation of Solid Phase Epitaxy Processes of Ar-Sputtered Si(100) Surfaces

Published online by Cambridge University Press:  25 February 2011

Katsuhiro Uesugi ,
Masamichi Yoshimura ,
Takafumi Yao ,
Tomoshige Sato ,
Takashi Sueyoshi  and
Masashi Iwatsuki
Katsuhiro Uesugi
Affiliation:
Dcpartmcnt of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Masamichi Yoshimura
Affiliation:
Dcpartmcnt of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Takafumi Yao
Affiliation:
Dcpartmcnt of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Tomoshige Sato
Affiliation:
JEOL Ltd., 3–1–2 Musashino, Akishima, Tokyo 196, Japan
Takashi Sueyoshi
Affiliation:
JEOL Ltd., 3–1–2 Musashino, Akishima, Tokyo 196, Japan
Masashi Iwatsuki
Affiliation:
JEOL Ltd., 3–1–2 Musashino, Akishima, Tokyo 196, Japan
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Abstract

Scanning tunneling microscopy (STM) is used to investigate the surface morphology of Ar+-ion bombarded Si(100) surfaces and to elucidate the very beginning stages of solid phase epitaxy (SPE) processes of the Ar+-ion bombarded Si surfaces. The Ar+-ion bombarded Si surface consists of hillocks of 1–2 nm in diameter and 0.35–0.75 nm in height. The onset of SPE initiates at around 590°C, at which temperature a (2×2) structure surrounded by amorphous regions is partially observed on terraces of the surface. During annealing at 590–620°C, the areas of the c(2×2) and c(4×4) reconstruction surrounded by amorphous regions develops. New defect models for the (2×2) and c(4×4) structures are proposed w here alternating arrangements of the buckled dimers together with missing dimer defects are considered. On the other hand, after thermal annealing of the Ar+-ion bombarded Si at 830°C for 10 sec, terraces of (2×1) and (1×2) orientations arc observed on the surface, and pyramidal structures on a nanometer-scale which consists of double-layer step edges (dimer rows perpendicular to terrace edge) arc observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 619
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Csepregi, L., Kennedy, E.F., Mayer, J.W. and Sigmon, T.W., J. Appl. Phys. 49, 3906 (1978).Google Scholar
2. Lau, S.S., Matteson, S., Mayer, J.W, Rcvcsz, P., Gyulai, J., Roth, J., Sigmon, T.W. and Cass, T., Appl. Phys. Lett. 34, 76 (1979).Google Scholar
3. Ishiwara, H., Yamamoto, H. and Furukawa, S.. Appl. Phys. Lett. 43, 1028 (1983).Google Scholar
4. Saitoh, S., Sugii, T., Ishiwara, H. and Furukawa, S., Jpn. J. Appl. Phys. 20, L130 (1981).Google Scholar
5. Hung, L.S., Lau, S.S., von Allmen, M., Mayer, J.W., Ullrich, B.M., Baker, J.E. and Williams, P., Appl. Phys. Lett. 37, 909 (1980).CrossRefGoogle Scholar
6. Kunii, Y., Tabc, M. and Kajiyama, K., Jpn. J. Appl. Phys. 21, 1431 (1982).Google Scholar
7. Cscpregi, L., Mayer, J.W. and Sigmon, T.W., Phys. Lett. A 54, 157 (1975).Google Scholar
8. Kitamura, S., Sato, T. and Jwatsuki, M., Nature 351, 215 (1991).Google Scholar
9. Fecnstra, R.M. and Ochrlcin, G.S., Appl. Phys. Lett. 47, 97 (1985).Google Scholar
10. Pandcy, K.C., in Proc of the 17th Int. Conf. on the Physics of Semiconductors, ed. Cadi, D.J. and Harrison, W. A. (Springer-Verlag, New York. 1985). p. 55.Google Scholar
11. Miillcr, K., Lang, E, Hammer, L., Grim, W., Hcilman, P. and Heinz, K., in Determination of Surface Structure by LEED, edited by Marcus, P.M. and Jona, F. (Plenum, New York, 1984), p. 483.Google Scholar
12. Wang, H., Lin, R. and Wang, X.. Phys. Rev. B 36, 7712 (1987).Google Scholar