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Stepped Gate Polysilicon Thin Film Transistor for Large Area Power Applications

Published online by Cambridge University Press:  10 February 2011

J. Aschenbeck
Affiliation:
Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK
Y. Chen
Affiliation:
Department of Electrical Engineering & Electronics, University of Liverpool, UK
F. Clough
Affiliation:
Emerging Technologies Research Centre, De Montfort University, UK
Y. Z. Xu
Affiliation:
Emerging Technologies Research Centre, De Montfort University, UK
E. M. Sankara Narayanan
Affiliation:
Emerging Technologies Research Centre, De Montfort University, UK
W. I. Milne
Affiliation:
Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK
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Abstract

For the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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