Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Itozaki, H.
and
Fujita, N.
1987.
Properties of a-SiGe and Application to Stacked Solar Cell.
MRS Proceedings,
Vol. 95,
Issue. ,
Rocheleau, Richard E.
Hegedus, Steven S.
Buchanan, Wayne A.
and
Jackson, Scott C.
1987.
Novel photochemical vapor deposition reactor for amorphous silicon solar cell deposition.
Applied Physics Letters,
Vol. 51,
Issue. 2,
p.
133.
Tsuo, Y. S.
Smith, E. B.
and
Deb, S. K.
1987.
Ion beam hydrogenation of amorphous silicon.
Applied Physics Letters,
Vol. 51,
Issue. 18,
p.
1436.
KONAGAI, Makoto
1988.
Advances In Solar Energy Technology.
p.
56.
Zarnani, H.
Yu, Z. Q.
Collins, G. J.
Bhattacharya, E.
and
Pankove, J. I.
1988.
Windowless helium lamp assisted chemical vapor deposition of hydrogenated amorphous silicon.
Applied Physics Letters,
Vol. 53,
Issue. 14,
p.
1314.
Hegedus, S.S.
Rocheleau, R.E.
Tullman, R.M.
Albright, D.E.
Saxena, N.
Buchanan, W.A.
Schubert, K.E.
and
Dozier, R.
1988.
Photo-assisted CVD of a-Si:H solar cells and a-SiGe:H films.
p.
129.
Dietrich, T. R.
Chiussi, S.
Stafast, H.
and
Comes, F. J.
1989.
ArF laser CVD of hydrogenated amorphous silicon: The role of buffer gases.
Applied Physics A Solids and Surfaces,
Vol. 48,
Issue. 5,
p.
405.
Suzuki, K.
Kuroiwa, K.
Kamisako, K.
and
Tarui, Y.
1990.
Doping properties of microcrystalline silicon prepared by mercury sensitized photochemical vapor deposition.
Applied Physics A Solids and Surfaces,
Vol. 50,
Issue. 2,
p.
227.
Kaloyeros, Aain E.
Corbett, James W.
Tobcano, Paul J.
and
Rizk, Richard B.
1990.
The Low-Temperature Metal-Organic Chemical Vapor Deposition (Ltmocvd) Route to Amorphous Silicon Semiconductors.
MRS Proceedings,
Vol. 192,
Issue. ,
Roth, A.
and
Comes, F. J.
1991.
Silicon Film Formation by Reaction of Active Hydrogen with Silane.
Berichte der Bunsengesellschaft für physikalische Chemie,
Vol. 95,
Issue. 10,
p.
1296.
Ghosh, Sukriti
De, Abhijit
Ray, Swati
and
Barua, A. K.
1992.
Role of hydrogen dilution and diborane doping on the growth mechanism of p-type microcrystalline silicon films prepared by photochemical vapor deposition.
Journal of Applied Physics,
Vol. 71,
Issue. 10,
p.
5205.
Ghosh, Sukriti
Dasgupta, Arup
and
Ray, Swati
1995.
Influence of boron doping and hydrogen dilution on p-type microcrystalline silicon carbide thin films prepared by photochemical vapor deposition.
Journal of Applied Physics,
Vol. 78,
Issue. 5,
p.
3200.
Madan, Arun
1995.
Plasma Deposition of Amorphous Silicon-Based Materials.
p.
243.
Dasgupta, A.
Ghosh, S.
and
Ray, S.
1995.
Highly conductive p-type microcrystalline silicon carbide prepared by photochemical vapour deposition.
Journal of Materials Science Letters,
Vol. 14,
Issue. 15,
p.
1037.
Tamir, S.
Zahavi, J.
Komem, Y.
and
Eizenberg, M.
1996.
Process optimization and related material properties of silicon films produced by laser-induced chemical vapour deposition from silane.
Journal of Materials Science,
Vol. 31,
Issue. 4,
p.
1013.
Jana, Tapati
and
Ray, Swati
1999.
Boron-doped a-SiOx:H films prepared by photo-CVD technique.
Journal of Non-Crystalline Solids,
Vol. 260,
Issue. 3,
p.
188.
Yeop Myong, Seung
Kew Lee, Hyung
Yoon, Euisik
and
Su Lim, Koeng
2002.
Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source.
Journal of Non-Crystalline Solids,
Vol. 298,
Issue. 2-3,
p.
131.
Jana, Tapati
Mukhopadhyay, Sumita
and
Ray, Swati
2002.
Low temperature silicon oxide and nitride for surface passivation of silicon solar cells.
Solar Energy Materials and Solar Cells,
Vol. 71,
Issue. 2,
p.
197.
Myong, Seung Yeop
Shevaleevskiy, Oleg
Lim, Koeng Su
Miyajima, Shinsuke
and
Konagai, Makoto
2005.
Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique.
Journal of Non-Crystalline Solids,
Vol. 351,
Issue. 1,
p.
89.
Babal, P.
Blanker, J.
Vasudevan, R.
Smets, A. H. M.
and
Zeman, M.
2012.
Microstructure analysis of n-doped μc-SiO<inf>x</inf>:H reflector layers and their implementation in stable a-Si:H p-i-n junctions.
p.
000321.