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Sructural evolution of GaN during initial stage MOCVD growth

Published online by Cambridge University Press:  03 September 2012

Chong Cook Kim
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Korea
Jung Ho Je
Affiliation:
Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science and Technology, Kwangju, Korea
Min-Su Yi
Affiliation:
Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science and Technology, Kwangju, Korea
Do Young Noh
Affiliation:
Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science and Technology, Kwangju, Korea
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Abstract

The structural evolution of GaN films during the initial growth process of metalorganic chemical vapor deposition (MOCVD) - low temperature nucleation layer growth, annealing, and high temperature epitaxial growth - was investigated in a synchrotron x-ray scattering experiment. The nucleation layer grown at 560°C that was predominantly cubic GaN consisted of tensile-strained aligned domains and relaxed misaligned domains. The hexagonal GaN, transformed from the cubic GaN during annealing to 1100°C, showed disordered stacking. The atomic layer spacing decreased as the fraction of the hexagonal domains increased. Subsequent growth of epitaxial GaN at 1100°C resulted in the formation of ordered hexagonal GaN domains with rather broad mosaicity.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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