Hostname: page-component-7479d7b7d-rvbq7 Total loading time: 0 Render date: 2024-07-12T10:28:44.552Z Has data issue: false hasContentIssue false
  • English
  • Français

Spectroscopic Investigation of Traps Producing Current Collapse In AlGaN/GaN Hemt Structures

Published online by Cambridge University Press:  21 March 2011

P.B. Klein ,
S.C. Binari ,
K. Ikossi ,
A.E. Wickenden ,
D.D. Koleske  and
R.L. Henry
P.B. Klein
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347, U.S.A.
S.C. Binari
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347, U.S.A.
K. Ikossi
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347, U.S.A.
A.E. Wickenden
Affiliation:
Army Research Laboratory, Adelphi, MD 20783-1197, U.S.A.
D.D. Koleske
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347, U.S.A.
R.L. Henry
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347, U.S.A.
Get access

Abstract

Photoionization spectroscopy (PS) measurements, previously carried out for the GaN MESFET, have been extended to the more complicated AlGaN/GaN HEMT structures. In all cases, the spectra revealed that the same two traps causing current collapse in the high resistivity (HR) GaN buffer layer of the MESFET were also responsible for current collapse in the HEMT structures. The HR buffer layers supporting the HEMT structures were prepared by MOVPE at varying growth pressures, in order to vary the incorporation of deep trapping centers. Lower growth pressures were observed to correlate with more severe current collapse and with an enhanced incorporation of carbon. Detailed analysis of the PS data suggests that one of the two responsible traps is related to carbon, while the other may be associated with structural defects in the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E5.2
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wu, F.-Y., Kapolnek, D., Ibbetson, J.P., Parikh, P., Keller, B.P. and Mishra, U.K., IEEE Electron. Dev. Lett. 48, 586 (2001).Google Scholar
2. Lu, W., Yang, J., Khan, M.A., and Adesida, I., IEEE Electron. Dev. Lett. 48, 581 (2001).Google Scholar
3. Zhang, L., Lester, L.G., Baca, A.G., Shul, R.J., Chang, P.C., Willison, C.G., Mishra, U.K., Denbaars, S.P. and Zolper, J.C., IEEE Trans. Electron. Dev. 41, 507 (2000).Google Scholar
4. Khan, M.A., Shur, M.S., Chen, Q.C. and Kuznia, J.N., Electron. Lett. 30, 2175 (1994).Google Scholar
5. Binari, S.C., Kruppa, W., Dietrich, H.B., Kelner, G., Wickenden, A.E. and Freitas, J.A. Jr, Solid State Electron. 41, 1549 (1997).Google Scholar
6. Binari, S.C., Ikossi, K., Roussos, J.A., Kruppa, W., Park, D., Dietrich, H.B., Koleske, D.D., Wickenden, A.E. and Henry, R.L., IEEE Trans. Electron. Dev. 48, 465 (2001).Google Scholar
7. Klein, P.B., Freitas, J.A. Jr, Binari, S.C. and Wickenden, A.E., Appl. Phys. Lett. 75, 4016 (1999).Google Scholar
8. Klein, P.B., Binari, S.C., Freitas, J.A. Jr, and Wickenden, A.E., J. Appl. Phys., 88, 2843 (1999).Google Scholar
9. Wickenden, A.E., Koleske, D.D., Henry, R.L., Gorman, R.J., Twigg, M.E., Fatemi, M., Freitas, J.A. Jr, and Moore, W.J., J. Electron. Mater. 29, 21 (2000).Google Scholar
10. Parish, G., Keller, S., Denbaars, S.P. and Mishra, U.K., J. Electron. Mater. 29, 15 (2000).Google Scholar
11. Twigg, M.E., Koleske, D.D., Wickenden, A.E., Henry, R.L. and Fatemi, M., 42nd Electronic Materials Conference, Denver CO (2000), unpublished.Google Scholar
12. Klein, P.B., Binari, S.C., Ikossi, K., Wickenden, A.E., Koleske, D.D. and Henry, R.L., unpublished.Google Scholar
13. Klein, P.B., Freitas, J.A. Jr, Binari, S.C. and Wickenden, A.E., Bull. Amer. Phys. Soc. 45, 840 (2000).Google Scholar
14. Ogino, T. and Aoki, M., Jpn. J. Appl. Phys. 19, 2395 (1980).Google Scholar
15. Reuter, E.E., Zhang, R., Kuech, T.F. and Bishop, S.G., MRS Internet J. Nitride Seimcond. Res. 4S1, G3.67 (1999).Google Scholar
16. Klein, P.B., Binari, S.C., Ikossi-Anastasiou, K., Wickenden, A.E., Koleske, D.D., Henry, R.L., Bull. Amer. Phys. Soc. 46, 981 (2001).Google Scholar
17. Birkle, U., Kirchner, V., Einfeldt, S., Hommel, D., Strauf, S., Michler, P. and Gutowski, J., MRS Internet J. Nitride Semicond. Res. 4S1, G5.6 (1999).Google Scholar
18. Neugebauer, J. and Walle, C.G. Van de, Advances in Solid State Physics 35, Helbig, R., ed., (Viewweg, Braunschweig/Wiesbaden, 1996), p. 25.Google Scholar