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The Slope Etching of a-Si:H Film using CF4 + O2 Gas

Published online by Cambridge University Press:  21 February 2011

Kang Hyun Sung ,
B. W. Park ,
J. J. Kim ,
C. Y. Kim ,
J. I. Choi ,
H. K. Bae ,
Y. H. Park  and
C. W. Hur
Kang Hyun Sung
Affiliation:
GoldStar Central Research Laboratory, Seoul, Korea.
B. W. Park
Affiliation:
GoldStar Central Research Laboratory, Seoul, Korea.
J. J. Kim
Affiliation:
GoldStar Central Research Laboratory, Seoul, Korea.
C. Y. Kim
Affiliation:
GoldStar Central Research Laboratory, Seoul, Korea.
J. I. Choi
Affiliation:
GoldStar Central Research Laboratory, Seoul, Korea.
H. K. Bae
Affiliation:
GoldStar Central Research Laboratory, Seoul, Korea.
Y. H. Park
Affiliation:
GoldStar Central Research Laboratory, Seoul, Korea.
C. W. Hur
Affiliation:
GoldStar Central Research Laboratory, Seoul, Korea.
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Abstract

The slope etching technology of hydrogenated amorphous silicon film (a-Si:H) has been very useful for its devices; thin film transistor, contact image sensor and other large area electronic components. To obtain a good step coverage slope etching was performed by RIE using CF4 gas and optimum amount of O2 gas after modification of photoresist(PR) patterns by thermal treatment. In this experiment, primary factors were

1) thermal treatment temperature and time of PR.

2) CF4 gas flow rate, etch rate of a-Si:H film and ash rate of PR in proportion to O2 gas flow rate.

As a result, the slope angle of 11° was obtained when CF4 gas flow rate was 46 SCCM, O2 gas flow rate was 7 SCCM and thermal treatment temperature and time was 140°C and 30 minutes respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 811
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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