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The SiO2/Si Interface Probed With Positrons

Published online by Cambridge University Press:  22 February 2011

Bent Nielsen ,
K. G. Lynn ,
T. C. Leung ,
D. O. Welch  and
G. Rubloff
Bent Nielsen
Affiliation:
Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
K. G. Lynn
Affiliation:
Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973 Department of Applied Science, Brookhaven National Laboratory, Upton, NY 11973 Physics Department, Brookhaven National Laboratory, Upton, NY 11973
T. C. Leung
Affiliation:
Physics Department, Brookhaven National Laboratory, Upton, NY 11973
D. O. Welch
Affiliation:
Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
G. Rubloff
Affiliation:
IBM, T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The effects of the heat treatment of Si covered with a thermally-grown ˜50 nm overlayer of SiO2 were probed by means of measurements of positron annihilation characteristics obtained with a variable-energy positron beam. From measurements at elevated temperature (˜500°C) it was observed that positrons implanted overlapping the SiO2/Si interface decay from a state with properties distinctively different from the state in Si and in SiO2. The nature of the annihilation characteristics indicates the presence of open volume defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 241
Copyright
Copyright © Materials Research Society 1988

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