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A Simple Lateral Grain Growth of Poly-Si by Single Excimer Laser Crystallization of Amorphous Silicon Film Deposited on Polygon Shaped Trench

Published online by Cambridge University Press:  01 February 2011

Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, KoreaE-mail:jsh@emlab.snu.ac.kr
Su-Hyuk Kang
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, KoreaE-mail:jsh@emlab.snu.ac.kr
Hee-Sun Shin
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, KoreaE-mail:jsh@emlab.snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, KoreaE-mail:jsh@emlab.snu.ac.kr
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Abstract

A simple lateral grain growth of polysilicon employing single excimer laser irradiation is proposed. In order to increase the size of silicon grain and to control the location of the large lateral grain, the oxide trench is employed under the amorphous silicon film in the proposed method. The proposed oxide trench, which is shaped like a triangle or a polygon with an acute angle, induces temperature gradient on the molten silicon film during the solidification. It was verified by SEM that about 2 μm-long silicon grains are successfully achieved near the oxide trench edge and the locations of lateral grains are controlled by the angular points of the diagram.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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