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Silicon-Based UV Detector Prototypes Using Luminescent Poroussilicon Films

Published online by Cambridge University Press:  09 August 2011

Limarix Peraza
Affiliation:
Dept. of Sciences and Technology, Metropolitan University, San Juan, PR.
Madeline Cruz
Affiliation:
Dept. of Sciences and Technology, Metropolitan University, San Juan, PR.
Angel Estrada
Affiliation:
Dept. of Sciences and Technology, Metropolitan University, San Juan, PR.
Carlos Navarro
Affiliation:
Dept. of Physics, University of Puerto Rico, San Juan, PR 00931
Javier Avalos
Affiliation:
Dept. of Sciences and Technology, Metropolitan University, San Juan, PR.
Luis F. Fonseca
Affiliation:
Dept. of Physics, University of Puerto Rico, San Juan, PR 00931
Oscar Resto
Affiliation:
Dept. of Physics, University of Puerto Rico, San Juan, PR 00931
S. Z. Weisz
Affiliation:
Dept. of Physics, University of Puerto Rico, San Juan, PR 00931
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Abstract

The luminescent properties of porous silicon (PSi) films in the visible region were used to improve the photoresponse of PSi/Si-wafer and PSi/Si p-n junctions UV detector prototypes in the region below 500nm. A luminescent PSi overlayer was formed on top of the Si wafers and p-n junctions by electrochemical anodization. These overlayers have emission spectra peaking close to 690nm. In the case of the PSi/Si wafer, the PSi film was produced with a high optical transparency above 600nm and highly absorbent below this value. With such characteristics, the incident UV radiation is partially absorbed and converted into visible radiation that can be highly transmitted through the PSi film and efficiently absorbed by the wafer or the junction. The UV measurements show enhancement of the photoresponse at 366nm as compared with control prototypes without PSi. Details about the enhancement process are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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