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Silicon Transport in Lateral Silicide Growth of CrSi2

Published online by Cambridge University Press:  28 February 2011

L. R. Zheng ,
L. R. Doolittle  and
J. W. Mayer
L. R. Zheng
Affiliation:
Department of Materials Science andEngineering Cornell University, Ithaca, NY 14853
L. R. Doolittle
Affiliation:
Department of Materials Science andEngineering Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Department of Materials Science andEngineering Cornell University, Ithaca, NY 14853
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Abstract

Silicide formation and growth are studied in three geometries: conventional planar thin films, lateral diffusion couples formed by depositing metal layers on Si islands, and device geometry couples formed by depositing metal on oxide-patterned Si substrates. The influence of impurities is studied by implanting arsenic and krypton into conventional and device geometry structures.

Here we present growth kinetics of CrSi2 where the presence of impurities has a strong influence. Si transport dominates in disilicide formation and leads to erosion of contacts around the periphery of oxide windows. Implantation of arsenic suppresses CrSi 2 formation; with krypton implantation, the growth kinetics shifts from linear to square-root in character. We attribute these results to impurity segregation at interfaces or grain boundaries.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 287
Copyright
Copyright © Materials Research Society 1986

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