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Silicon Nanocrystallite Light Emitting Devices Fabricated by Full Pulsed-Laser-Ablation Process

Published online by Cambridge University Press:  17 March 2011

Yuka Yamada ,
Toshiharu Makino ,
Nobuyasu Suzuki  and
Takehito Yoshida
Yuka Yamada
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co.Ltd., 3-10-1 Higashimita, Tama-ku, Kawasaki 214-8501, Japan
Toshiharu Makino
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co.Ltd., 3-10-1 Higashimita, Tama-ku, Kawasaki 214-8501, Japan
Nobuyasu Suzuki
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co.Ltd., 3-10-1 Higashimita, Tama-ku, Kawasaki 214-8501, Japan
Takehito Yoshida
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co.Ltd., 3-10-1 Higashimita, Tama-ku, Kawasaki 214-8501, Japan
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Abstract

We have developed silicon (Si) nanocrystallite light-emitting devices synthesized by a novel integrated process in which a size-controlling unit of differential mobility analyzer (DMA) is combined to a nanocrystallite formation unit of pulsed laser ablation (PLA). The size-controlled Si nanocrystallites as active layers have been deposited on Si substrates, and have been covered with stoichiometric indium oxide (In2O3) thin films synthesized also by the PLA process. The electroluminescence (EL) spectra had a narrow bandwidth of 0.15 eV peaked at slightly higher energy region (1.17 eV) than the bulk Si energy gap (1.10 eV), at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F18.2.1
Copyright
Copyright © Materials Research Society 2001

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