Skip to main content Accessibility help
×
Home
Hostname: page-component-747cfc64b6-4xs5l Total loading time: 0.211 Render date: 2021-06-15T06:53:18.581Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiOx Films

Published online by Cambridge University Press:  10 February 2011

N. Daldosso
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
G. Das
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
G. Dalba
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
S. Larcheri
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
R. Grisenti
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
G. Mariotto
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
L. Pavesi
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
F. Rocca
Affiliation:
CNR-IFN, Sezione “CeFSA” di Trento, I-38050 Povo (Trento), Italy
F. Priolo
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
G. Franzò
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
A. Irrera
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
M. Miritello
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
D. Pacifici
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
F. Iacona
Affiliation:
CNR-IMM, Sezione di Catania, Stradale Primosole 50, I-95121 Catania, Italy
Get access

Abstract

Si nanocrystals (Si-nc) embedded in amorphous silica matrix have been obtained by thermal annealing of substoichiometric SiOx films, deposited by PECVD (plasma enhanced chemical vapour deposition) technique with different amount of Si concentrations (42 and 46 at.%). Both nucleation and evolution of Si-nc together with the changes of the amorphous matrix have been studied as a function of the annealing temperature. The comparison of x-ray absorption measurements in Total Electron Yield (TEY) mode at the Si k-edge with photoluminescence (PL), FTIR and Raman spectra, allowed clarifying the processes of Si-nc formation and structural evolution as a function of the annealing temperature and Si content.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Dinh, L.N., Chase, L.L., Balooch, M., Terminello, L., and Wooten, F., Appl. Phys. Lett. 3111, 3111 (1994).CrossRefGoogle Scholar
2. Inokuma, T., Wakayama, Y., Muramoto, T., Aoki, R., Kurata, Y., and Hasegawa, S., J. Appl. Phys. 2228, 2228 (1998).CrossRefGoogle Scholar
3. Garrido, B., Lopez, M., Gonzalez, O., Perez-Rodriguez, A., Morante, J.R., and Bonafos, C., Appl. Phys. Lett. 3143, 3143 (2000).CrossRefGoogle Scholar
4. Prakash, G. Vijaya, et al., J. Nanosci. Nanotech. 159, 159 (2001).CrossRefGoogle Scholar
5. Iacona, F., Franzò, G., and Spinella, C., J. Appl. Phys. 1295, 1295 (2000).CrossRefGoogle Scholar
6. Pavesi, L., Negro, L. Dal, Mazzoleni, C., Franzò, G., and Priolo, F., Nature 440, 440 (2000); L. Dal Negro et al., Physica E 297, 297 (2003).CrossRefGoogle Scholar
7.Towards the First Silicon Laser edited by Pavesi, Lorenzo, Gaponenko, Sergey and Negro, Luca Dal, Nato Science Series II, Mathematics, Physics and Chemistry vol. 93 (Kluwer Academic Publisher, Dordrecht 2003)Google Scholar
8. Iacona, F., Lombardo, S., and Campisano, S., J. Vac. Sci. Technol. B 2693, 2693 (1996).CrossRefGoogle Scholar
9. Erbil, A., III, G. S. Cargill, Frahm, R., and Boehme, R. F., Phys. Rev. B 2450, 2450 (1988).CrossRefGoogle Scholar
10. Dalba, G., Daldosso, N., Fornasini, P., Grisenti, R., Pavesi, L., Rocca, F., Franzò, G., Priolo, F., and Iacona, F., Appl. Phys. Lett. 889, 889 (2003).CrossRefGoogle Scholar
11. Gusev, E.P., Lu, H.C., Garfunkel, E.L., Gustafsson, T., and Green, M.L., “Growth and characterization of ultrathin nitrided oxide films”, IBM J. Res. Develop. 265, 265 (1999).Google Scholar
12. Price, K.J., McNeil, L.E., Suvkanov, A., Irene, E.A., MacFarlane, P.J., and Zvanut, M.E., J. Appl. Phys. 2628, 2628 (1999).CrossRefGoogle Scholar
13. Prakash, G. Vijaya, Cazzanelli, M., Gaburro, Z., Pavesi, L., Iacona, F., Franzò, G., and Priolo, F., J. Mod. Opt. 719, 719 (2002).CrossRefGoogle Scholar
14. Ehara, T. and Machida, S., Thin Sol. Films 275, 275 (1999).CrossRefGoogle Scholar
15. Sassella, A., Borghesi, A., Corni, F., Monelli, A., Ottaviani, G., Tonini, R., Pivac, B., Bacchetta, M., Zanotti, L., J. Vac. Sci. Technol. A 377, 377 (1997).CrossRefGoogle Scholar
16. Khriachtchev, L., Kilpela, O., Karirinne, S., Keranen, J. and Lepisto, T., Appl. Phys. Lett. 323, 323 (2001).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiOx Films
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiOx Films
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiOx Films
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *