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Silicide Mediated Grown Silicon Thin Films for Photodiodes

Published online by Cambridge University Press:  26 February 2011

Joondong Kim ,
Wayne A. Anderson ,
Chang-Soo Han  and
Eung-Sug Lee
Joondong Kim
Affiliation:
joonkim@kimm.re.kr, Korea Institute of Machinery and Materials, Nano-Mechanical System research center, 171 Jang, Yuseong, Daejeon, 305343, Korea, Republic of, +82-9906-0272, +82-10-42-868-7123
Wayne A. Anderson
Affiliation:
waanders@eng.buffalo.edu, University at Buffalo, State University of New York, Electrical Engineering, Bonner Hall, Buffalo, NY, 14260, United States
Chang-Soo Han
Affiliation:
cshan@kimm.re.kr, Korea Institute of Machinery and Materials, Nano-Mechanical Systems, 171 Jang-dong, Yuseong, Daejeon, 304343, Korea, Republic of
Eung-Sug Lee
Affiliation:
les648@kimm.re.kr, Korea Institute of Machinery and Materials, Nano-Mechanical Systems, 171 Jang-dong, Yuseong, Daejeon, 304343, Korea, Republic of
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Abstract

Quality Si thin films were grown by the metal-induced growth (MIG) method. Metal (Co, Ni, or mixing of Co and Ni) was thermally evaporated on a 200 nm-SiO2 coated Si wafer. Si sputtering was performed at 600 – 620 °C in a dc magnetron system. The reaction of Si and metal first formed a silicide (CoSi2 or NiSi2) layer and further Si sputtering grew a Si film above it. The grown Si films were practically fabricated for Schottky photodiodes and electrically measured under one sun scan illumination (100 mW/cm2).

Keywords

polycrystalSisputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 974: Symposium CC – Solar Energy Conversion , 2006 , 0974-CC01-12
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

[1] Yoon, Y. -G., Kim, B. -D., Kim, M. -S., Choi, S. -H., and Joo, S. -K., J. Electro. Chem. Soc. 7 G151 (2004).Google Scholar
[2] McCulloch, D. J. and Brotherton, S. D., Appl. Phys. Lett. 66 2060 (1995).10.1063/1.113902Google Scholar
[3] Benatmane, A., Montgomery, P. C., Fogarassy, E., and Zahorski, D., Appl. Phys. Sci. 208 189 (2003).Google Scholar
[4] Shih, A., Meng, C. -Y., Lee, S. -C., and Chern, M. -Y., J. Appl. Phys. 88 3725 (2000).10.1063/1.1288784Google Scholar
[5] Kim, J., Anderson, W. A., Song, Y.-J, Kim, G. B., Appl. Phys. Lett. 86 (2005) 253101.Google Scholar
[6] Kim, J., Anderson, W.A., Nano letters 6 (2006) 1356.Google Scholar
[7] Imaizumi, M., Ito, T., Yamaguchi, M., Kaneko, K., J. Appl. Phys., 81 (1997) 7635.10.1063/1.365341Google Scholar
[8] Pakhomov, A. B., Denardin, J. C., de Lima, O. F., Knobel, M., Missell, F. P., J. Magn. Magn. Mater. 226 (2001) 1631.Google Scholar
[9] Ghosh, A. K., Fishman, C., Feng, T., J. Appl. Phys. 51, (1980) 446.10.1063/1.327342Google Scholar