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Semiconducting Arylacetylene:Insulating Polymer Blends for Organic-Based Electronic Devices

Published online by Cambridge University Press:  30 March 2012

Pascal Wolfer
Affiliation:
Department of Materials, ETH Zurich, Wolfgang-Pauli Strasse 10, 8093 Zurich, CH.
Maria Laura Santarelli
Affiliation:
Dipartimento di Ingegneria Materiali Ambiente, Università di Roma Sapienza, via Eudossiana 18, 00185 Roma, I.
Luigi Vaccaro
Affiliation:
Laboratory of Green Synthetic Organic Chemistry, Dipartimento di Chimica, Università degli Studi di Perugia, via Elce di Sotto 8, 06123 Perugia, I. E-mail: assunta@unipg.it
Alessandra Broggi
Affiliation:
Dipartimento di Ingegneria Materiali Ambiente, Università di Roma Sapienza, via Eudossiana 18, 00185 Roma, I.
Daniela Lanari
Affiliation:
Laboratory of Green Synthetic Organic Chemistry, Dipartimento di Chimica, Università degli Studi di Perugia, via Elce di Sotto 8, 06123 Perugia, I. E-mail: assunta@unipg.it
Liyang Yu
Affiliation:
Centre for Plastic Electronics, Imperial College London, London SW7 2AZ UK E-mail: n.stingelin-stutzmann@imperial.ac.uk
Thomas D. Anthopoulos
Affiliation:
Centre for Plastic Electronics, Imperial College London, London SW7 2AZ UK E-mail: n.stingelin-stutzmann@imperial.ac.uk
Paul Smith
Affiliation:
Department of Materials, ETH Zurich, Wolfgang-Pauli Strasse 10, 8093 Zurich, CH.
Natalie Stingelin
Affiliation:
Department of Materials, ETH Zurich, Wolfgang-Pauli Strasse 10, 8093 Zurich, CH. Centre for Plastic Electronics, Imperial College London, London SW7 2AZ UK E-mail: n.stingelin-stutzmann@imperial.ac.uk
Assunta Marrocchi
Affiliation:
Laboratory of Green Synthetic Organic Chemistry, Dipartimento di Chimica, Università degli Studi di Perugia, via Elce di Sotto 8, 06123 Perugia, I. E-mail: assunta@unipg.it
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Abstract

In this contribution we have reported about bi-component blends of readily accessible semiconducting molecular arylacetylenes with insulating high-density polyethylene (HDPE) and poly(vinylidene fluoride) (PVDF) that may exhibit electronic characteristics comparable to those of the neat semiconductors, as measured in field-effect transistors (FETs).

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

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