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Segregation effects and bandgap engineering in InGaN quantum-well heterostructures

Published online by Cambridge University Press:  11 February 2011

Kirill A. Bulashevich ,
Sergey Yu. Karpov ,
Roman A. Talalaev ,
Igor Yu. Evstratov  and
Yuri N. Makarov
Kirill A. Bulashevich
Affiliation:
Soft-Impact Ltd, P.O. Box 33, 194156 St. Petersburg, Russia
Sergey Yu. Karpov
Affiliation:
Soft-Impact Ltd, P.O. Box 33, 194156 St. Petersburg, Russia
Roman A. Talalaev
Affiliation:
Soft-Impact Ltd, P.O. Box 33, 194156 St. Petersburg, Russia
Igor Yu. Evstratov
Affiliation:
Soft-Impact Ltd, P.O. Box 33, 194156 St. Petersburg, Russia
Yuri N. Makarov
Affiliation:
STR Inc, P.O. Box 70604, Richmond, VA 23255, USA
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Abstract

The analysis of In surface segregation and its impact on the composition profile and light emission spectra of the InGaN single quantum well heterostructures grown by Metalorganic Vapor Phase Epitaxy (MOVPE) is carried out by coupled solution of the Poisson and Schrödinger equations. Effective methods of controlling the composition profile, indium predeposition and temperature ramping during the cap layer growth are considered in terms of surface segregation model. General trends in spectra transformation upon the forward bias variation and their correlations with the quantum well electronic structure are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.5
Copyright
Copyright © Materials Research Society 2003

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References

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