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RTA-Preparation of β-FeSi2 Layers from MBE-Grown Fe-Si Films Deposited on Si and Relaxed SiGe (100) Substrates

Published online by Cambridge University Press:  15 February 2011

M. LíBezný
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Poortmans
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Dekoster
Affiliation:
Instituut voor Kern- and Stralingsfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
S. Degroote
Affiliation:
Instituut voor Kern- and Stralingsfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
A. Vantomme
Affiliation:
Instituut voor Kern- and Stralingsfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
B. G. M. De Lange
Affiliation:
DIMES, Lorentzweg 1, 2628 CJ Delft, Netherlands
G. Langouche
Affiliation:
Instituut voor Kern- and Stralingsfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
J. Nijs
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

Rapid thermal annealing (RTA) of Fe-Si layers co-deposited on n- and p- type Si (100) and Si-capped relaxed Si0.6Ge0.4 (100) substrates was studied. Relaxed (100) Si0.6Ge0.4 epitaxial layers represent a pseudo-matched substrate for the β-FeSi2 phase. Fe-Si layers with a 1:2 composition ratio were deposited at room temperature in an MBE system. Samples were then subjected to a rapid thermal annealing in a H2/N2-atmosphere in the temperature range between 500 and 800 °C. Conversion electron Mössbauer spectroscopy showed that the layers consist of the β-FeSi2 phase. Nomarski microscopy revealed crystal grains of the diameter from 5 to 10 μm. Cross-section transmission electron microscopy study found smooth surfaces and interfaces. No significant structural defects were found inside the grains. Differences between current-voltage characteristics of simple devices prepared on these layers agree with the trends expected from their band diagrams.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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RTA-Preparation of β-FeSi2 Layers from MBE-Grown Fe-Si Films Deposited on Si and Relaxed SiGe (100) Substrates
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