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Room-Temperature Migration of Ion-Implanted Boron in Silicon

Published online by Cambridge University Press:  15 February 2011

E. J. H. Collait
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, the, Netherlands
K. Weemers
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, the, Netherlands
D. J. Gravesteijn
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, the, Netherlands
J. G. M. van Berkum
Affiliation:
Philips CFT-Materials Analysis, Prof. Holstlaan 4, 5656 AA Eindhoven, the, Netherlands
N. E. B. Cowern
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, the, Netherlands
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Abstract

Room temperature migration and clustering behaviour of implanted boron into silicon has been investigated by performing ion implantation of the 11B isotope into MBE-grown in-situ 10B-doped epitaxial Si-layers. We, for the first time, show that a fraction of the implanted boron migrates very deep into the bulk of the Si with substitutional 10B acting as trap centers for the migrating 11B.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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