Skip to main content Accessibility help
×
Home
Hostname: page-component-544b6db54f-jcwnq Total loading time: 0.176 Render date: 2021-10-22T12:56:31.755Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Role of Hydrogen for Microcrystalline Silicon Formation

Published online by Cambridge University Press:  10 February 2011

K. Saitoh
Affiliation:
TFSSC Superlab., Electrotechnical Laboratory, Tsukuba, Japan
M. Kondo
Affiliation:
TFSSC Superlab., Electrotechnical Laboratory, Tsukuba, Japan Tokyo Institute of Technology, Yokohama, Japan
M. Fukawa
Affiliation:
TFSSC Superlab., Electrotechnical Laboratory, Tsukuba, Japan
T. Nishimiya
Affiliation:
TFSSC Superlab., Electrotechnical Laboratory, Tsukuba, Japan
W. Futako
Affiliation:
Tokyo Institute of Technology, Yokohama, Japan
I. Shimizu
Affiliation:
Tokyo Institute of Technology, Yokohama, Japan
A. Matsuda
Affiliation:
TFSSC Superlab., Electrotechnical Laboratory, Tsukuba, Japan Tokyo Institute of Technology, Yokohama, Japan
Get access

Abstract

The role of hydrogen atoms in the formation process of hydrogenated microcrystalline silicon (μc-Si:H) by plasma enhanced chemical vapor deposition method has been investigated. Under the present conditions, the etching and the permeation of hydrogen atoms in the subsurface region do not cause the crystallization. The kinetics study of surface morphology and structure in the initial growth of μc-Si:H on an atomically flat substrate indicates that the onset thickness of island coalescence reduced under μc-Si:H formation condition. The results support the ‘surface diffusion model’ in which the surface diffusion of film precursors is enhanced by the sufficient hydrogen coverage of surface and by hydrogen atom recombination energy on the growing surface of the film.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Meier, J., Torres, P., Platz, R., Dubail, S., Kroll, U., Selvan, J.A. Anna, Vaucher, N. Pellaton, Hof, Ch., Fischer, D., Keppner, H., Shah, A., Ufert, K.-D., Giannoules, P. and Koehler, J., Mat. Res. Soc. Symp. Proc. 420, (1996) pp.314 CrossRefGoogle Scholar
2 Matsuda, A., J. Non-Cryst. Solids 59 & 60 (1983) 767774 CrossRefGoogle Scholar
3 Tsai, C.C., Anderson, G.B., Thompson, R. and Wacker, B., J. Non-Cryst. Solids 114, (1989) 151153 CrossRefGoogle Scholar
4 Shibata, N., Fukuda, K., Ohtoshi, H., Hanna, J., Oda, S. and Shimizu, I., Mat. Res. Soc. Symp. Proc. 95, (1987) pp.225235 CrossRefGoogle Scholar
5 Nakamura, K., Yoshino, K., Takeoka, S. and Shimizu, I., Jpn. J. Appl. Phys. Vol. 34 (1995) pp. 442449 CrossRefGoogle Scholar
6 Veprek, S. and Maracek, V., Solid State Electron. 11 (1968) 683684 CrossRefGoogle Scholar
7 Asano, A., T. Ichimura and Sakai, H., J. Appl. Phys. 65 (1989) 24392444 CrossRefGoogle Scholar
8 Asano, A., Appl. Phys. Lett. 56 (1990) 533535 CrossRefGoogle Scholar
9 Nguyen, H.V., An, I., Collins, R.W., Lu, Y., Wakagi, M. and Wronski, C.R., Appl. Phys. Lett. 65 (1994) 33353337 CrossRefGoogle Scholar
10 Karpenko, O. P., Yalisove, S. M. and Eaglesham, D.J., J. Appl. Phys. 82, (1997), pp.11571165 CrossRefGoogle Scholar
11 Matsuda, A. and Goto, T., Mat. Res. Soc. Symp. Proc. 164, (1989) pp. 314 CrossRefGoogle Scholar
12 Saitoh, K., Kondo, M., Fukawa, M., Nishimiya, T., Matsuda, A., Futako, W. and Shimizu, I., Appl. Phys. Lett. 71 (1997) 34033405 CrossRefGoogle Scholar
13 Gerard, P., Deneuville, A. and Courths, R., Thin Solid Films 71 (1980) 221 CrossRefGoogle Scholar
14 Kondo, M., Nishimiya, T., Saitoh, K., Ohe, T. and Matsuda, A., Mat. Res. Soc. Symp. Proc. 467, (1997) pp.391396 CrossRefGoogle Scholar
15 Saitoh, K., Kondo, M. and Matsuda, A., Mat. Res. Soc. Symp. Proc. 467, (1997) pp.385390 CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Role of Hydrogen for Microcrystalline Silicon Formation
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Role of Hydrogen for Microcrystalline Silicon Formation
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Role of Hydrogen for Microcrystalline Silicon Formation
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *