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Role of Hydrogen for Microcrystalline Silicon Formation

Published online by Cambridge University Press:  10 February 2011

K. Saitoh ,
M. Kondo ,
M. Fukawa ,
T. Nishimiya ,
W. Futako ,
I. Shimizu  and
A. Matsuda
K. Saitoh
Affiliation:
TFSSC Superlab., Electrotechnical Laboratory, Tsukuba, Japan
M. Kondo
Affiliation:
TFSSC Superlab., Electrotechnical Laboratory, Tsukuba, Japan Tokyo Institute of Technology, Yokohama, Japan
M. Fukawa
Affiliation:
TFSSC Superlab., Electrotechnical Laboratory, Tsukuba, Japan
T. Nishimiya
Affiliation:
TFSSC Superlab., Electrotechnical Laboratory, Tsukuba, Japan
W. Futako
Affiliation:
Tokyo Institute of Technology, Yokohama, Japan
I. Shimizu
Affiliation:
Tokyo Institute of Technology, Yokohama, Japan
A. Matsuda
Affiliation:
TFSSC Superlab., Electrotechnical Laboratory, Tsukuba, Japan Tokyo Institute of Technology, Yokohama, Japan
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Abstract

The role of hydrogen atoms in the formation process of hydrogenated microcrystalline silicon (μc-Si:H) by plasma enhanced chemical vapor deposition method has been investigated. Under the present conditions, the etching and the permeation of hydrogen atoms in the subsurface region do not cause the crystallization. The kinetics study of surface morphology and structure in the initial growth of μc-Si:H on an atomically flat substrate indicates that the onset thickness of island coalescence reduced under μc-Si:H formation condition. The results support the ‘surface diffusion model’ in which the surface diffusion of film precursors is enhanced by the sufficient hydrogen coverage of surface and by hydrogen atom recombination energy on the growing surface of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 843
Copyright
Copyright © Materials Research Society 1998

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References

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