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Role of Charge Interaction in the Behavior of Organic Thin Film Transistors

Published online by Cambridge University Press:  01 February 2011

Christoph Erlen
Affiliation:
erlen@tum.de, Technische Universitaet Muenchen, Insitute for Nanoelectronics, Arcisstr. 21, Muenchen, 80333, Germany, +49 173 3685708
Francesca Brunetti
Affiliation:
francesca.brunetti@uniroma2.it, University of Rome "Tor Vergata", Rome, N/A, Italy
Matthias Fiebig
Affiliation:
matthias.fiebig@physik.uni-muenchen.de, Ludwig-Maximilians-Universitaet, Munich, N/A, Germany
Giuseppe Scarpa
Affiliation:
scarpa@tum.de, Technische Universitaet Muenchen, Institute for Nanoelectronics, Munich, Germany
Bert Nickel
Affiliation:
bert.nickel@physik.uni-muenchen.de, Ludwig-Maximilians-Universitaet, Munich, N/A, Germany
Aldo Di Carlo
Affiliation:
aldo.dicarlo@uniroma2.it, University of Rome "Tor Vergata", Rome, N/A, Italy
Paolo Lugli
Affiliation:
lugli@tum.de, Technische Universitaet Muenchen, Institute for Nanoelectronics, Munich, N/A, Germany
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Abstract

Strong hysteresis in the I-V characteristics of organic thin film transistors are a severe obstacle for the implementation of large circuits. It therefore is a key success factor for the optimization and widespread application of organic electronics to understand the underlying principles. We report the fabrication of two types of pentacene transistors with either polyvinyl alcohol (PVA) or SiO2 as gate dielectric. These devices respond to transient measurement sweeps with a fundamentally different I-V hysteresis. A self-contained model is presented, which associates this behavior with the influence of traps at the SiO2/pentacene interface and polarization in the PVA layer. Simulations employing the commercial drift-diffusion tool SENTAURUSTM are performed to verify our models.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

[1] Podzorov, V. et al. , Appl. Phys. Lett., vol. 83, p. 3504, 2003 Google Scholar
[2] Horowitz, G., J. Mater. Res., vol. 19, p.1946, 2004.Google Scholar
[3] Erlen, C. et al. , In proceedings Conference IEEE-Nano, 2006.Google Scholar
[4] Becker, E. et al. , Appl. Phys. Lett., vol. 83, p.4044, 2003.Google Scholar
[5] Duncalf, P. et al. , J. Appl. Polym. Sci., vol. 8, p. 1763, 1964.Google Scholar
[6] Nguyen, P. et al. , Org. Elect., 2:105120, 2001.Google Scholar
[7] http://www.synopsis.comGoogle Scholar
[8] Bolognesi, A. et al. , IEEE Trans. Electr. Dev., vol. 51, p.1997, 2004.Google Scholar
[9] Scheinert, S. et al. , J. Appl. Phys., vol. 92, p. 330, 2002.Google Scholar
[9] Erlen, C. et al. , J. Comp. Elec., DOI 10.1007/s10825-006-0006-9, Spinger Verlag, 2006.Google Scholar
[10] Kang, J. et al. , Appl. Phys. Lett., vol. 86, p. 152115, 2005.Google Scholar
[11] Sze, S., Physics of Semiconductor Devices, Wiley & Son, 1982.Google Scholar