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Removal of Fluorine From a Si (100) Surface by a Remote RF Hydrogen Plasma

Published online by Cambridge University Press:  15 February 2011

J. P. Barnak ,
S. King ,
J. Montgomery ,
Ja-Hum Ku  and
R. J. Nemanich
J. P. Barnak
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
S. King
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
J. Montgomery
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
Ja-Hum Ku
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
R. J. Nemanich
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
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Abstract

Fluorine contamination was removed from a Si(100) surface by an atomic H flux. The surface was intentionally contaminated to approximate the residual fluorine concentration remaining after a concentrated HF last process. By dipping the wafers in concentrated HF the thin oxide was removed and replaced with a hydrogen and fluorine terminated surface. This surface was then either vacuum annealed or exposed to a 20 Watt rf excited H-plasma at 50 mTorr, in order to achieve an atomically clean surface. The substrate temperature during the Hplasma exposure and vacuum anneal was 450°C. The surface chemistry was characterized with x-ray photoemission spectroscopy (XPS), auger electron spectroscopy (AES), and angle-resolved UV photoemission spectroscopy (ARUPS). The surface symmetry was characterized with low energy electron diffraction (LEED). Before the H-plasma exposure, the XPS spectra indicated Si-F bonding, and a l×1 LEED diffraction pattern was observed. Immediately following the Hplasma exposure, the fluorine concentration was reduced below detection limits of XPS, and the surface showed a 2×1 reconstruction. A mechanism is proposed by which molecular HF results from atomic hydrogen interactions with fluorine on the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 357
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Cheng, C.C., Lucas, S.R., Gutleben, H., Choyke, W.J., and Yates, J.T., Jr.; J. Am. Chem. Soc. 114: 1249–1252 (1992).Google Scholar
2. Koleske, D.D. and Gates, S.M.; J. Chem. Phys. 98 (6), 15 March: 5091, (1993).Google Scholar
3. Takahagi, T., Nagai, I., Ishitani, A., and Kuroda, H.; J. Appl. Phys. 64(7), 1 October 1988, 3516.Google Scholar
4. Izumi, A., Matsuka, T., Takeuchi, T., and Yamano, A., in Cleaning Technology in Semiconductor Device Manufacturing, Ruzyllo, J. and Novak, R., Eds., The Electrochem. Soc., Inc. Princeton, NJ, Vol.12: 260–276 (1992).Google Scholar
5. Schneider, T.P., Aldrich, D.A., Cho, Jaewon, and Nemanich, R.J., in Mat. Res. Soc. Symp. Proc., Spring 1991 in Symposium B: Silicon Molecular Beam Epitaxy.Google Scholar
6. Chang, T.J., J. Appl. Phys. 51: 2614, (1980).Google Scholar
7. Stinespring, C.D. and Freedman, A., Appl. Phys. Lett. 48: 718, (1986).Google Scholar
8. Jaewon Cho, Schneider, T.P., VanderWeide, J., Jeon, Hyeongtag, and Nemanich, R.J.; Appl. Phys. Lett. 59: 1995–97, (1991).Google Scholar
9 Lee, D.H., Joannopoulos, J., and Berker, A., J.Vac. Sci. Technol. B 1(3), July-Sept.: 705(1983).Google Scholar