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Relatively Low Temperature Growth of Carbon Nanotubes by Thermal Chemical Vapor Deposition using Novel Catalysts

Published online by Cambridge University Press:  01 February 2011

Han-Chung Tai
Affiliation:
ryne0130.ee93g@nctu.edu.tw, National Chiao Tung University, Department of Electronics Engineering, Dorm 7, Room 216 , 1001 Ta Hsueh Road, Hsinchu, Taiwan 300, ROC, Hsinchu, Taiwan, 300, Taiwan
Kao-Chao Lin
Affiliation:
ryne0130.ee93g@nctu.edu.tw, National Chiao Tung University, Department of Electronics Engineering, Hsinchu, 300, Taiwan
Tsung-Ying Chuang
Affiliation:
ryne0130.ee93g@nctu.edu.tw, National Chiao Tung University, Department of Electronics Engineering, Hsinchu, 300, Taiwan
Yao-Ren Chang
Affiliation:
ryne0130.ee93g@nctu.edu.tw, National Chiao Tung University, Department of Electronics Engineering, Hsinchu, 300, Taiwan
Rui-Ling Lai
Affiliation:
ryne0130.ee93g@nctu.edu.tw, National Chiao Tung University, Department of Electronics Engineering, Hsinchu, 300, Taiwan
Jiun-Kai Shiu
Affiliation:
ryne0130.ee93g@nctu.edu.tw, National Chiao Tung University, Department of Electronics Engineering, Hsinchu, 300, Taiwan
Huang-Chung Cheng
Affiliation:
ryne0130.ee93g@nctu.edu.tw, National Chiao Tung University, Department of Electronics Engineering, Hsinchu, 300, Taiwan
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Abstract

We found out the promising catalyst materials(NiPd). The NiPd not only has the low melting point but also has the Pd enhancing the surface diffusion at low temperatures(<500'c ). With the Pd film thickness increasing, we could control the CNT density and synthesize more aligned and uniform CNTs. We also obtained the better electrical properties including lower turn-on field (3.4 V/um) and higher current density (34.3 mA/cm2) for NiPd as catalyst. For the advantages described above, we believe that the difficulty of low temperature on FED can be overcome. Further, the large area field emission display might be fabricated in the future.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

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