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Relationships between Interface Structures and Electrical Properties in the High-k/III–V System

Published online by Cambridge University Press:  31 January 2011

Tetsuji Yasuda
Affiliation:
yasuda-t@aist.go.jp
Noriyuki Miyata
Affiliation:
nori.miyata@aist.go.jp, AIST, Tsukuba, Japan
Yuji Urabe
Affiliation:
yuji.urabe@aist.go.jp, AIST, Tsukuba, Japan
Hiroyuki Ishii
Affiliation:
h-ishii@aist.go.jp, AIST, Tsukuba, Japan
Taro Itatani
Affiliation:
t.itatani@aist.go.jp, AIST, Tsukuba, Japan
Hideki Takagi
Affiliation:
takagi.hideki@aist.go.jp, AIST, Tsukuba, Japan
Hisashi Yamada
Affiliation:
yamadah7@sc.sumitomo-chem.co.jp, Sumitomo Chemical, Tsukuba, Japan
Noboru Fukuhara
Affiliation:
fukuharan1@sc.sumitomo-chem.co.jp, Sumitomo Chemical, Tsukuba, Japan
Masahiko Hata
Affiliation:
hatam1@sc.sumitomo-chem.co.jp, Sumitomo Chemical, Tsukuba, Japan
Akihiro Ohtake
Affiliation:
OHTAKE.Akihiro@nims.go.jp, NIMS, Tsukuba, Japan
Masafumi Yokoyama
Affiliation:
yokoyama@mosfet.t.u-tokyo.ac.jp, The University of Tokyo, Tokyo, Japan
Takuya Hoshii
Affiliation:
hoshii@mosfet.t.u-tokyo.ac.jp, The University of Tokyo, Tokyo, Japan
Takashi Haimoto
Affiliation:
haimoto@mosfet.k.u-tokyo.ac.jp, The University of Tokyo, Tokyo, Japan
Momoko Deura
Affiliation:
deura@ee.t.u-tokyo.ac.jp, The University of Tokyo, Tokyo, Japan
Masakazu Sugiyama
Affiliation:
sugiyama@ee.t.u-tokyo.ac.jp, The University of Tokyo, Tokyo, Japan
Mitsuru Takenaka
Affiliation:
takenaka@mosfet.t.u-tokyo.ac.jp, The University of Tokyo, Tokyo, Japan
Shinichi Takagi
Affiliation:
takagi@ee.t.u-tokyo.ac.jp, The University of Tokyo, Tokyo, Japan
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Abstract

Integration of the III–V channel MISFETs on the Si platform is a potential solution to realize performance improvement and power reduction in the sub-22 nm node and beyond. To take advantage of the high electron mobility of III-Vs, the MIS interfaces of high integrity should be developed. This paper reports how the MIS characteristics vary in response to the changes in the interface composition and structures, and discusses the physics and chemistry behind these observations. We fabricated a wide variety of the high-k/III–V interface structures by employing the state-of-the-art technologies of the epitaxial wafers by MOCVD, surface reconstruction control in the MBE environment, wet/dry surface treatments optimized by utilizing XPS/AES analyses, and deposition of quality dielectrics (Al2O3, HfO2) by ALD and EB evaporation. The MIS characteristics were evaluated in the capacitor and FET structures. The talk will include the following topics: the effects of the cation composition (Al, Ga, In) of the III-V bulk on the MIS characteristics [1], the importance of the anion control (N, S) at the interface to improve the MIS characteristics, and the surface orientation ((100) vs. (111)) as a new parameter in the III-V MIS device design [1]. This work was carried out in the Nanoelectronics Project supported by NEDO/METI. [1] T. Yasuda et al., as discussed at 39th IEEE SISC (San Diego, Dec. 2008).

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1See Emerging Research Devices in ITRS 2007 and 2008 Update, http://www.itrs.net/Google Scholar
2 Natori, K., J. Appl,. Phys. 76, 4879 (1994).10.1063/1.357263CrossRefGoogle Scholar
3 Takagi, S., Irisawa, T., Tezuka, T., Numata, T., Nakaharai, S., Hirashita, N., Moriyama, Y., Usuda, K., Toyoda, E., Dissanayake, S., Shichijo, M., Nakane, R., Sugahara, S., Takenaka, M., and Sugiyama, N., IEEE Trans. Electron Device 55, 21 (2008).10.1109/TED.2007.911034CrossRefGoogle Scholar
4 Yasuda, T., Miyata, N., Ishii, H., Itatani, T., Ichikawa, O., Fukuhara, N., Hata, M., Ohtake, A., Haimoto, T., Hoshii, T., Takenaka, M., and Takagi, S., Proceedings of the 39th IEEE Semiconductor Interface Specialists Conference, P.7 (San Diego, 2008)Google Scholar
5 Souza, J. P. de, Kiewra, E., Sun, Y., Callegari, A., Sadana, D. K., Shahidi, G., Webb, D. J., Fompeyrine, J., Germann, R., Rossel, C., and Marchiori, C., Appl. Phys. Lett. 92, 153508 (2008).10.1063/1.2912027CrossRefGoogle Scholar
6 Hinkle, C. L., Milojevic, M., Brennan, B., Sonnet, A. M., Aguirre-Tostado, F. S., Hughes, G. J., Vogel, E. M., and Wallace, R. M., Appl. Phys. Lett. 94, 162101 (2009).10.1063/1.3120546CrossRefGoogle Scholar
7 Kim, H.-S., Ok, I., Zhang, M., Zhu, F., Park, S., Yum, J., Zhao, H., Lee, J. C., Majhi, P., Goel, N., Tsai, W., Gaspe, C. K., and Santos, M. B., Appl. Phys. Lett. 93, 062111 (2008).10.1063/1.2972107CrossRefGoogle Scholar
8 Miyata, N., Yasuda, T., and Ohtake, A., Appl. Phys. Express 3, 035701-2010).Google Scholar
9 Miyata, N., Appl. Phys. Lett. 89, 102903 (2006).10.1063/1.2337878CrossRefGoogle Scholar
10 Abe, Y., Miyata, N., Shiraki, Y., and Yasuda, T., Appl. Phys. Lett. 90, 172906 (2007).10.1063/1.2731514CrossRefGoogle Scholar
11 O'Connor, É., Monaghan, S., Long, R. D., O'Mahony, A., Povey, I. M., Cherkaoui, K., Pemble, M. E., Brammertz, G., Heyns, M., Newcomb, S. B., Afanas'ev, V. V., and Hurley, P. K., Appl. Phys. Lett. 94, 102902 (2009).10.1063/1.3089688CrossRefGoogle Scholar
12 Mönch, W., J. Appl. Phys. 80, 5076 (1996); Appl. Phys. Lett. 67, 2209 (1995).10.1063/1.363486CrossRefGoogle Scholar
13 Ye, P., J. Vac. Sci. Technol. A 26, 697 (2008)10.1116/1.2905246CrossRefGoogle Scholar
14 Robertson, J., Appl. Phys. Lett. 94, 152104 (2009).10.1063/1.3120554CrossRefGoogle Scholar
15 Tung, R. T., Mater. Sci. Eng. Rep. 35, 1 (2001).10.1016/S0927-796X(01)00037-7CrossRefGoogle Scholar
16 Yasuda, T., Miyata, N., and Ohtake, A., Appl. Surf. Sci. 254, 7565 (2008).10.1016/j.apsusc.2008.01.032CrossRefGoogle Scholar
17 Hinkle, C. L., Sonnet, A. M., Vogel, E. M., McDonnell, S., Hughes, G. J., Milojevic, M., Lee, B., Aguirre-Tostado, F. S., Choi, K. J., Kim, H. C., Kim, J., and Wallace, R. M., Appl. Phys. Lett. 92, 071901 (2008).10.1063/1.2883956CrossRefGoogle Scholar
18 Hong, M., J. Crystal Growth 175/176, 422 (1997).10.1016/S0022-0248(96)01202-XCrossRefGoogle Scholar
19 Gao, F., Lee, S. J., Chi, D. Z., Balakumarand, S., and Kwong, D. L., Appl. Phys. Lett. 90, 252904 (2007).10.1063/1.2749840CrossRefGoogle Scholar
20 Chin, H.-C., Gong, X., Liu, X., and Yeo, Y.-C., IEEE Electr. Device Lett. 30, 805 (2009).10.1109/LED.2009.2024649CrossRefGoogle Scholar
21 Lin, J., Lee, S., Oh, H.-J., Yang, W., Lo, G. Q., Kwong, D. L., and Chi, D. Z., IEDM Tech. Dig. p.401 (2008).Google Scholar
22 Aguirre-Tostado, F. S., Milojevic, M., Choi, K. J., Kim, H. C., Hinkle, C. L., Vogel, E. M., Kim, J., Yang, T., Xuan, Y., Ye, P. D., and Wallace, R. M., Appl. Phys. Lett. 93, 061907 (2008).10.1063/1.2961003CrossRefGoogle Scholar
23 Lin, H.-C., Wang, W.-E., Brammertz, G., Meuris, M., and Heyns, M., Microelectron. Eng. 86, 1554 (2009).10.1016/j.mee.2009.03.112CrossRefGoogle Scholar
24 Haimoto, T., Hoshii, T., Nakagawa, S., Takenaka, M., and Takagi, S., Appl. Phys. Lett. 96, 012107 (2010).10.1063/1.3269906CrossRefGoogle Scholar
25 Hoshii, T., Yokoyama, M., Yamada, H., Hata, M., Yasuda, T., Takenaka, M., and Takagi, S., Presented at 40th IEEE Semiconductor Interface Specialists Conferenc (Arlington, 2009).Google Scholar
26 Miyaura, S., Kasai, Y., Yamamura, Y., Inokuma, T., Iyama, K. and Takamiya, S., Jpn. J. Appl. Phys. 42, 7244 (2003).10.1143/JJAP.42.7244CrossRefGoogle Scholar
27 Ishii, H., Miyata, N., Urabe, Y., Itatani, T., Yasuda, T., Yamada, H., Fukuhara, N., Hata, M., Deura, M., Sugiyama, M., Takenaka, M., and Takagi, S., Appl. Phys. Express, 2, 121101 (2009).10.1143/APEX.2.121101CrossRefGoogle Scholar
28 Xuan, Y., Wu, Y. Q., Lin, H. C., Shen, T., and Ye, P. D.: IEEE Electron. Device Lett. 28, 935 (2007).10.1109/LED.2007.906436CrossRefGoogle Scholar
29 Xu, M., Wu, Y. Q., Koybasi, O., Shen, T., and Ye, P. D., Appl. Phys. Lett. 94, 212104 (2009).10.1063/1.3147218CrossRefGoogle Scholar
30 Deura, M., Hoshii, T., Yamamoto, T., Ikuhara, Y., Takenaka, M., Takagi, S., Nakano, Y., and Suguyama, M.: Appl. Phys. Express 2, 011101 (2009).10.1143/APEX.2.011101CrossRefGoogle Scholar
31 Hoshii, T., Deura, M., Sugiyama, M., Nakane, R., Sugahara, S., Takenaka, M., Nakano, Y., and Takagi, S.: Phys. Status Solidi C 5, 2733 (2008).10.1002/pssc.200779309CrossRefGoogle Scholar
32 Yokoyama, M., Yasuda, T., Takagi, H., Yamada, H., Fukuhara, N., Hata, M., Suguyama, M., Nakano, Y., Takenaka, M., and Takagi, S., Proc. Symp. VLSI Technol. 2009, p. 242; Appl. Phys. Express 2, 124501 (2009).Google Scholar

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