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The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Poly-Crystalline Silicon Film

Published online by Cambridge University Press:  15 February 2011

Kee-Chan Park
Affiliation:
School of Electrical Engineering, Seoul Nat'l Univ., Seoul, KOREA
Kwon-Young Choi
Affiliation:
AMLCD Division, Samsung Electronics co., KOREA
Jae-Hong Jeon
Affiliation:
School of Electrical Engineering, Seoul Nat'l Univ., Seoul, KOREA
Min-Cheol Lee
Affiliation:
School of Electrical Engineering, Seoul Nat'l Univ., Seoul, KOREA
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul Nat'l Univ., Seoul, KOREA
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Abstract

A novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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