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Recrystallisation of Preamorphized Silicon Investigated by RBS and PAC

Published online by Cambridge University Press:  10 February 2011

G. Rohrlack
Affiliation:
Institut für Strahlen- und Kernphysik der Universital Bonn, D-53115 Bonn, Germany
K. Freitag
Affiliation:
Institut für Strahlen- und Kernphysik der Universital Bonn, D-53115 Bonn, Germany
R. Vianden
Affiliation:
Institut für Strahlen- und Kernphysik der Universital Bonn, D-53115 Bonn, Germany
R. Gwilliam
Affiliation:
University of Surrey, Guildford, GU2 5HX, UK
B. J. Sealy
Affiliation:
University of Surrey, Guildford, GU2 5HX, UK
Z. Jafri
Affiliation:
University of Surrey, Guildford, GU2 5HX, UK
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Abstract

The technique of preamorphization is a well-known method to avoid channeling tails of implanted dopants when fabricating devices. This is achieved by implanting a nondopant atom to produce the amorphous layer. We studied the recrystallisation of silicon preamorphized by Si, Ge and Sn implants. The recrystallisation was investigated by RBS and the y-y perturbed angular correlation (PAC) technique. RBS provides information about the thickness and the perfection of the recovered layer. Additional experimental data are supplied by the PAC technique, which used the postimplanted radioactive isotope 111Ina s a probe atom. The recovery of the lattice structure in the vicinity of the probe atoms is monitored on a microscopic scale via the electric field gradient produced at the site of the In nucleus by the surrounding lattice defects. The results are discussed and compared to the RBS data.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1. de Souza, J.P. and Sadana, D.K., Ion Implantation of Silicon and Gallium Arsenide, in: Handbook on Semiconductors ed. Moss, T.S., Vol. 3b ed. Mahajan, S. (Elsevier Science, Amsterdam 1994)Google Scholar
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