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Reconstructed Structure of SiO2/Si(111) Interface

Published online by Cambridge University Press:  21 February 2011

Ichiro Hirosawa ,
Jun'ichiro Nizuki ,
Toru Tatsumi ,
Koichi Akimoto  and
Junji Matsui
Ichiro Hirosawa
Affiliation:
NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305. Japan
Jun'ichiro Nizuki
Affiliation:
NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305. Japan
Toru Tatsumi
Affiliation:
NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305. Japan
Koichi Akimoto
Affiliation:
NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305. Japan
Junji Matsui
Affiliation:
NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305. Japan
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Abstract

In order to investigate the initial oxidation process Qf the Si (111) surface, we have studied the molecular beam deposited Si0 2/Si(111)-7×7 interface structure using grazing incidence X-ray diffraction geometry. We suggest a three-fold symmetry structural model composed of stacking fault layer, dimer layer and additional ordered atoms. The three-fold symmetry structure comes from the preference for oxidation in the faulted half of the 7×7 structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 309
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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