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Reactions of Titanium Films with thin Silicon Dioxide, Nitride, and Oxynitride Films During Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

Sen-Hou Ko ,
N. M. Devashrajee ,
Shyam P. Murarka ,
Pei-Jun Ding  and
William A. Lanford
Sen-Hou Ko
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy NY 12180.
N. M. Devashrajee
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy NY 12180.
Shyam P. Murarka
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy NY 12180.
Pei-Jun Ding
Affiliation:
Department of Physics State University of New York at Albany, Albany, New York
William A. Lanford
Affiliation:
Department of Physics State University of New York at Albany, Albany, New York
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Abstract

The interactions of Ti with SiO2, Si3N4, and SiOiNy have been studied during rapid thermal annealing at 400 to 900 °C in Ar with 3% H2 ambient. X-ray diffraction, sheet resistance measurements, RBS, nuclear reaction technique to profile hydrogen, and microscopy have been employed in this study. The results of this investigation indicate that Si3N4 and SiOxNy are more stable with Ti than SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 665
Copyright
Copyright © Materials Research Society 1992

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References

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