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Rapid Thermal Annealing of InP Implanted with Group IV Eleients

Published online by Cambridge University Press:  22 February 2011

M.C. Ridgway  and
P Kringhoj
M.C. Ridgway
Affiliation:
Department of and Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
P Kringhoj
Affiliation:
Institute of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark
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Abstract

Electrical activation and carrier mobility have been studied as a function of ion dose and annealing temperature for InP implanted with Group IV elements (Si, Ge and Sn). In general, electrical activation increases with decreasing ion dose and/or increasing annealing temperature. Si and Sn exhibit comparable activation and mobility, superior to that of Ge, over the ion dose and temperature range examined. The relative influences of implantation-induced non-stoichiometry and the amphoteric behaviour of the group IV elements have been investigated. For the latter, the amphoteric behavior of Ge > Si > Sn.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 351
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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