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Range Distributions of Boron In Silicon

Published online by Cambridge University Press:  25 February 2011

Mikko Hautala
Mikko Hautala*
Affiliation:
Department of Physics, University of Helsinki, Siltavuorenpenger 2° C, SF−00170 Helsinki, Finland
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Abstract

Depth profiles of 1-2000 keV boron in amorphous and crystalline silicon have been calculated using the computer simulation code COSIPO. Clear inconsistencies have been found in the experimentally measured range parameters. The optimum selection in channeling reduction is found to be a 9° tilt from the ˂001˃-axis combined with a 7° rotation from the ˂100˃- axis. A smaller offset angle yields noticeable channeling at low energies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 109
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

/l/ Wilson, R.G., J. Appl. Phys. 54, 6879 (1983).Google Scholar
/2/ Wach, W. and Wittmaack, K., Nucl. Instr. Meth. 194, 113 (1982).Google Scholar
/3/ Biersack, J.P., Nucl. Instr. Meth. 182/183, 199 (1981).Google Scholar
/4/ Hautala, M., Phys. Rev. B30, 5010 (1987).Google Scholar
/5/ Seidel, T.E. in Second International Conference on Ion Implantation in Semiconductors, Garmisch, edited by Ruge, I. and Graul, J. (Springer-Verlag, New York, 1971) p.47.CrossRefGoogle Scholar
/6/ Ziegler, J.F., Crowder, B.L., Cole, G.W., Baglin, J.E.E. and Masters, B.J., Appl. Phys. Lett. 21, 16 (1972).Google Scholar
/7/ Miyagawa, Y. and Miyagawa, S., J. Appl. Phys. 54, 7124 (1983).Google Scholar
/8/ Michel, A.E., Kastl, R.H., Mader, S.R., Masters, B.J. and Gardner, J.A., Appl. Phys. Lett. 44, 404 (1984).CrossRefGoogle Scholar
/9/ Cho, K., Aller, W.R., Finstad, T.G., Chu, W.K., Liu, J. and Wortman, J.J., Conference on Ion Beam Modification of Materials, Cornell, 1984.Google Scholar
/10/ Liu, T.M. and Oldham, W.G., IEEE Electron Device Letters, EDL–4, 59 (1983).Google Scholar
/11/ Miyake, M., Yoshizima, M. and Harada, H., J. Electrochem. Soc. 130, 716 (1983).CrossRefGoogle Scholar
/12/ Eisen, F.H., Can. J. Phys. 46, 561 (1968).Google Scholar
/13/ Bister, M., Hautala, M. and Jdntti, M., Rad. Effects 42, 201 (1979).CrossRefGoogle Scholar
/14/ Wach, W. and Wittmaack, K., Phys. Rev. B27, 3528 (1983).Google Scholar
/15/ Cervena, J., Hnatowicz, V., Hoffmann, J., Kosina, Z., Kvitek, J. and Onheiser, P., Nucl. Instr. Meth. 188, 185 (1981).Google Scholar
/16/ Ryssel, H., Prinke, G., Haberger, K., Hoffmann, K., Muller, K. and Henkelmann, R., Appl. Phys. 24, 39 (1981).Google Scholar
/17/ Ingram, D.C., Baker, J.A. and Walsh, D.A., Conference on Ion Beam Modification of Materials, Cornell, 1984.Google Scholar
/18/ Hautala, M., Nucl. Instr. Meth. B2, 130 (1984).Google Scholar