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Raman Spectra of Srm-3Bi4TimO3m+3 Thin Films

Published online by Cambridge University Press:  01 February 2011

Jia Wang ,
Guangxu Cheng ,
Shantao Zhang ,
Hongwei Cheng  and
Yanfeng Chen
Jia Wang
Affiliation:
National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing, 210093, China
Guangxu Cheng
Affiliation:
National Laboratory of Solid State Microstructures, Center of Materials Analysis, Nanjing University, Nanjing, 210093, China
Shantao Zhang
Affiliation:
National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
Hongwei Cheng
Affiliation:
National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
Yanfeng Chen
Affiliation:
National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China
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Abstract

A series of bismuth layer-structured ferroelectrics thin films Srm-3Bi4TimO3m+3(m=3, 4, 5, and 6) were deposited by pulsed laser deposition (PLD) on (001) LaAlO3 single crystal substrate. XRD and Raman studies have been performed. The more sensitive Raman spectra lead to a different understanding on the layer structure of Sr3Bi4Ti6O21 from XRD. This can be attributed to the lager c-axis constant of Sr3Bi4Ti6O21 due to more layers. More layers lead to increasing disorder in the local scale of the average grain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C3.17
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Paz de Araujo, C. A., Cuchlaro, J. D., McMillan, L. D., Scott, M. C., and Scott, J. F. Nature (London) 374, 627 (1995).Google Scholar
2. Kojima, S., Imaizumi, R., Hamazaki, S. and Takashige, M., Jpn. J. Appl. Phys., 33, 5559 (1994).Google Scholar
3. Wang, J., Cheng, G. X., Zhang, S. T., Cheng, H. W., and Chen, Y. F. Physica B (in press).Google Scholar
4. Wang, J., Cheng, G. X., Zhang, S. T., Cheng, H. W., Zhu, Y. P. and Chen, Y. F. submitted to J. Appl. Phys.Google Scholar
5. Zhang, S. T., Yang, B., Webb, J. F., Chen, Y. F., Liu, Z. G., Wang, D. S., Wang, Y. and Ming, N. B., J. Appl. Phys. 92, 4954 (2002).Google Scholar
6. Osada, M., Kakihana, M., Mitsuya, M., Watanabe, T. and Funakubo, H. Jpn. J. Appl. 40, 891(2001).Google Scholar
7. Kojima, S., Imaizumi, R., Hamazaki, S. and Takashige, M., Jpn. J. Appl. Phys., 33, 5559 (1994).Google Scholar
8. Zhang, S. T., Chen, Y. F., Sun, H. P., Pan, X. Q., Tan, W. S., Liu, Z. G. and Ming, N. B., J. Appl. Phys. 94, 544 (2003).Google Scholar