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Raman Scattering From [(CdSe)m(ZnSe)n]p-ZnSe Quantum Wells

Published online by Cambridge University Press:  21 February 2011

Z.P. Wang
Affiliation:
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, CHINA
H.X. Han
Affiliation:
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, CHINA
Z.X. Liu
Affiliation:
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, CHINA
W.T. Qin
Affiliation:
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, CHINA
Z.L. Peng
Affiliation:
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, CHINA
S.X. Yuan
Affiliation:
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, CHINA
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Abstract

Raman scattering from a (CdSe)m(ZnSe)n-ZnSe strained quantum well structure, composed of (CdSe)m(ZnSe)n as well layers and thick ZnSe as barrier layers, is presented in this report. Two kinds of ZnSe-like LO phonon confined modes were observed by Raman scattering at 10-300 K. Resonance Raman scattering was accomplished by changing sample temperature and incident photon energy and as a results, up to 7 orders of ZnSe-like LO multi-phonon modes were observed. In the discussion, we suggest that anti-Stokes Raman scattering measurements can provide a meaningful way to distinguish the multi-phonon Raman scattering from hot luminescence.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

1 Parbrook, P.J., Henderson, B. , K.P.Donnell, , Wright, P.J. and Cockayne, B., J. Cryst. Growth, 117(1992)492 Google Scholar
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