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Raman Characterization of Silicon Nanoclusters Embedded in Fused Silica

Published online by Cambridge University Press:  01 February 2011

David Barba
Affiliation:
barba@emt.inrs.ca, INRS, EMT, 1605 blvd. Lionel Boulet, Varennes, J3X 1S2, Canada
Milene Clavel
Affiliation:
clavelm@gmail.com, INRS, EMT, 1605 blvd. Lionel Boulet, Varennes, J3X 1S2, Canada
Francois Martin
Affiliation:
martin@emt.inrs.ca, INRS, EMT, 1605 blvd. Lionel Boulet, Varennes, J3X 1S2, Canada
Guy Ross
Affiliation:
ross@emt.inrs.ca, INRS, EMT, 1605 blvd. Lionel Boulet, Varennes, J3X 1S2, Canada
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Abstract

Silicon nanocrystals (Si-nc) and amorphous silicon (a–Si) aggregates either produced by silicon implantation in fused silica have been studied by micro-Raman spectroscopy. Under certain experimental conditions, relevant information regarding both the dimension and the size distribution of Si-nc can be extracted from the energy shifts and the spectral distortion of the phonon excitation observed near 520 cm−1. Results are presented for different sample annealing times and ion fluences. These data agree with the direct observation by TEM of non-uniformly depth-distributed silicon nanocrystals. Moreover, measurements recorded for different Raman probing depths give evidence of chemical composition changes within the fused silica matrix. The depth evolution of the phonon peak associated with the Raman signature of a-Si near 470 cm−1 shows the presence of amorphous silicon, whose concentration is higher in the region where the large Si-nc are located.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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