Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-06-18T00:00:30.749Z Has data issue: false hasContentIssue false

Quantum-Cross Tunneling Junction for High Density Memory

Published online by Cambridge University Press:  01 February 2011

Hideo Kaiju
Affiliation:
kaiju@es.hokudai.ac.jp, Hokkaido University, Research Institute for Electronic Science, Kita-12, Nishi-6, Sapporo, 060-0812, Japan, +81(Japan)-11-706-2878, +81(Japan)-11-706-2883
Kenji Kondo
Affiliation:
kkondo@es.hokudai.ac.jp, Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Sapporo, 060-0812, Japan
Akira Ishibashi
Affiliation:
i-akira@es.hokudai.ac.jp, Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Sapporo, 060-0812, Japan
Get access

Abstract

We calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chen, J., Reed, M. A., Rawlett, A. M., and Tour, J. M., Science 286, 1550 (1999).Google Scholar
2. Chen, Y., Ohlberg, D. A. A., Li, X., Stewart, D. R., Jeppesen, J. O., Nielsen, K. A., Stoddard, J. F., Olynick, D. L., and Anderson, R., Appl. Phys. Lett. 82, 1610 (2003).Google Scholar
3. Wu, W., Jung, G.-Y., Olynick, D. L., Straznicky, J., Li, Z., Li, X., Ohlberg, D. A. A., Chen, Y., Wang, S. – Y., Liddle, J. A., Tong, W. M., Williams, R. S., Appl. Phys. A 80, 1173 (2005).Google Scholar
4. Jung, G. Y., Wu, W., Ganapathiappan, S., Ohlberg, D. A. A., Saifislam, M., Li, X., Olynick, D. L., Lee, H., Chen, Y., Wang, S. Y., Tong, W. M., Williams, R. S., Appl. Phys. A 80, 1331 (2005).Google Scholar
5. Ishibashi, A., Proc. of internatinal symposium on nano science and technology, 44 (2004).Google Scholar
6. Kawaguchi, N., Kaiju, H. and Ishibashi, A.: Proc. of Multi-Institutional internatinal symposium, 68 (2005).Google Scholar
7. Ishibashi, A. and Kondo, K., Electron. Lett. 40, 1268 (2004).Google Scholar
8. Kondo, K. and Ishibashi, A.: Jpn. J. Appl. Phys. 45, 9137 (2006).Google Scholar
9. Chen, Y., Jung, G.–Y., Ohlberg, D. A. A., Li, X., Stewart, D. R., Jeppesen, J. O., Nielsen, K. A., Stoddart, J. F., and Williams, R. S., Nanotechnology 14, 462 (2003).Google Scholar
10. Miyazaki, T. and Tezuka, N., J. Magn. Magn. Mat. 139, L231 (1995).Google Scholar
11. Moodera, J. S., Kinder, L. R., Wong, T. M., and Meservey, R., Phys. Rev. Lett. 74, 3273 (1995).Google Scholar
12. Kaiju, H., Fujita, S., Morozumi, T., and Shiiki, K., J. Appl. Phys. 91, 7430 (2002).Google Scholar
13. Simmons, J. G., J. Appl. Phys. 34, 1793 (1963).Google Scholar
14. Tsu, R. and Esaki, L., Appl. Phys. Lett. 22, 562 (1973).Google Scholar
15. Chang, L. L., Esaki, L., and Tsu, R., Appl. Phys. Lett. 24, 593 (1974).Google Scholar
16. Sharvin, Yu. V.: Sov. Phys. JETP 21, 655(1965).Google Scholar
17. Tatara, G., Zhao, Y.-W., Munoz, M., and Garcia, N.: Phys. Rev. Lett. 83, 2030 (1999).Google Scholar
18. Reed, M. A., Chen, J., Rawlett, A. M., Price, D. W., and Tour, J. M.: App. Phys. Lett. 78, 3735 (2001).Google Scholar