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Pulsed Laser Processing of Electrodeposited CuInSe2 Photovoltaic Absorber Thin Films

Published online by Cambridge University Press:  01 February 2011

Ashish Bhatia
Affiliation:
ashish.bhatia@utah.edu, UNIVERSITY OF UTAH, SALT LAKE CITY, Utah, United States
Phillip Dale
Affiliation:
phillip.dale@uni.lu, University of Luxembourg, Belvaux, Luxembourg
Matt Nowell
Affiliation:
matt.nowell@ametek.com, EDAX, Draper, Utah, United States
Michael Scarpulla
Affiliation:
scarpulla@eng.utah.edu, University of Utah, Salt Lake City, Utah, United States
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Abstract

CuInSe2 (CIS) is commercially processed using energy intensive vacuum processes such as sputtering and thermal evaporation followed by thermal annealing. In order to reduce the cost of fabricating CIS photovoltaic absorber layers we need fast and cheap processing methods. We have investigated the use of non-vacuum electrochemical deposition (ED) followed by ultra violet pulsed laser annealing (UV-PLA). We report here on the results of ns pulsed KrF irradiation of ED CIS films and ED CIS films which were first annealed in a Se atmosphere.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1 Ahmed, E. et al. , J. Mater. Eng. Perform. 15 213 (2006).CrossRefGoogle Scholar
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4 Dale, P.J. et al. , J. Phys. D: Appl. Phys. 41 085105 (2008).CrossRefGoogle Scholar
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6 Contreras, M.A. et al. , Prog. Photovolt.: Res. Appl. 7 311 (1999)3.0.CO;2-G>CrossRefGoogle Scholar

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Pulsed Laser Processing of Electrodeposited CuInSe2 Photovoltaic Absorber Thin Films
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