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Pulsed Laser Annealing of Al, Ni, and MgO Containing Nickel Precipitates*

Published online by Cambridge University Press:  15 February 2011

J. Narayan
J. Narayan*
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

We have investigated the generation of point defects and dislocations, and the formation of dislocation loops as a function of pulse energy density in laser annealed Al, Ni, and MgO containing nickel precipitates. In the case of Al where vacancies are mobile above 200 K, mostly vacancy loops were observed at room temperature in laser melted layers. Dislocations are formed below the laser-melted layers as well as in specimens treated with pulses below the melting threshold, due to thermal stresses. In the case of Ni (where vacancies are mobile above 373 K) the microstructure in room temperature laser annealed specimens consists of primarily dislocations and their tangles. In MgO:Ni crystals, enough laser energy was absorbed to melt nickel precipitates. The dislocation structure around the precipitates and the transformation of nickel precipitates from coherent into incoherent, provided information on melting and crystal growth of these precipitates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 389
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W–7405–eng–26 with the Union Carbide Corporation.

References

REFERENCES

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